With the aid of the particle swarm optimization algorithm (PSOA), the layout of 10x10 vertical cavity surface emitting laser (VCSEL) array is optimized to improve the output optical power. The simulation results show that, for the optimized VCSEL array with PSOA, the peak junction temperature is lowered by 6.55K, and the non-uniformity of the junction temperature distribution is improved by 32.56% when compared with the conventional VCSEL array without PSOA. As a result, the output optical power is increased by 89.86%. Furthermore, both the VCSEL arrays with and without PSOA are fabricated and the experimental results are consistent well with the simulation results.
High speed and high efficiency photodetectors are the key components in optical transmission, optical sensing and optical
processing systems. Except performance requirements, cost control is also an aspect that must be considered in the current
technological development. Therefore, silicon-based high-speed and high-efficiency chip level photodetectors that can be
monolithic integrated with very large-scale CMOS integrated circuits have become the focus of research. SOI structure
provides performance improvement for silicon-based HPT. We demonstrate a SOI-based SiGe Heterojunction
Phototransistor which has greater light absorption compared with Si-based HPT. The influence of SOI structure on
absorption and collector current of SiGe heterojunction phototransistor (HPT) are simulated and analyzed in this paper.
When the optical power is 10mw, the collector current in SOI-based HPT reported in this paper can reach 4.6mA with
5.83% of light absorption calculated, while the collector current in Si-based HPT is 3.35mA with 4.48% of light absorption
calculated under 940nm wavelength. The peak responsivity with SOI structure exhibits 2.82A/W which is enhanced by
12.8% than that of Si-based HPT.
In the paper, the effect of Ge profiles on the performance of lateral SiGe heterojunction bipolar transistor (LHBT) on silicon-on-insulator (SOI) substrate with positive bias voltage has been studied. With the aid of substrate bias (VS), the peak current gain (β) of LHBT with trapezoidal Ge profile is obviously enhanced, which is almost as same as LHBT with uniform Ge profile. At the same time, the β of LHBT with trapezoidal Ge profile is kept as temperature increases. However, the β of LHBT with uniform Ge profile is decreased as temperature increases. Furthermore, for LHBT with trapezoidal Ge profile, the peak junction temperature is lowered by 20.51K and the cut-off frequency (fT) is also improved by 158.4 GHz when compared with that of the uniform one. The results show that LHBTs with trapezoidal Ge profile could achieve the superior electrical, thermal, and high frequency performance at the same time, which provides useful guidelines to design SiGe HBTs for microwave and digital or mixed-signal applications.
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