The increased performance and versatility of epitaxially grown III-V Type II strained layer superlattice (T2SLS) materials led to disruption of the IR sensor industry over the last decade. Increased performance at reduced cost are highly attractive to many end customers. Access to this detector material combined with the L3Harris front-side illuminated FPA structure lend to mechanically robust FPAs with array size only limited by source detector wafer size. This paper will present an overview of the technology development at L3Harris and the progress that has been made introducing SLS material into high operating temperature (HOT) MWIR sensors, LWIR sensors and dual-band (MW/MW & MW/LW) sensors.
L3Harris has developed a multispectral sensor architecture that opens doors to the incorporation of enabling functionality for future applications. This sensor architecture, while detector material agnostic in nature, builds upon our type-II superlattice (T2SL) technology, which was originally developed through the tri-service Vital Infrared Sensor Technology Acceleration (VISTA) program. The sensor architecture consists of stacked absorber layers that can be individually processed as they are integrated into the sensor stack. This layer-based approach enables the insertion of additional functional structures to enhance performance, such as embedded dielectric filters for efficient spectral separation, which would not be possible in a monolithic design. Due to the additional degrees of freedom with this configuration, it is necessary to design the filter such that it is compatible with the process required to functionalize each absorber while simultaneously meeting performance requirements. In this work, we report on various filter designs impacting the performance of focal plane arrays (FPAs) having embedded dielectric filters, under various practical constraints.
We present a method of determining the background doping type in semiconductors using capacitance-voltage measurements on overetched double mesa p-i-n or n-i-p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p-n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p-i-n and n-i-p structures, determined that the material is residually doped p-type, which is well established by other sources. The method was then applied on a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type.
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