InSb is an important Ⅲ-Ⅴnarrow gap compound semiconductor material. It is widely used in optoelectronic devices manufacture especially mid-wave infrared detectors. With the application of ICP etching in large-scale InSb IRFPA detectors fabrication process, the influence of ICP etching induced damage on InSb IRFPA devices has been paid more attention. Surface states which reflect the characteristics of semiconductor surface play an important role in the study on etching damage of semiconductor materials. In this paper, the surface state density on three InSb samples: one sample without etching, one sample etched by ICP and another sample wet etched by lactic acid/nitric acid etchant after ICP etching, is tested and calculated by quasi-static C-V method. The characterization and removal of ICP etching induced damage are investigated. Furthermore, the method of testing and calculating the distribution of surface state density has been presented detailedly in this paper. This work plays a significant role in the development of large-scale InSb IRFPA detectors.
In the hybrid InSb focal plane arrays(FPAs) chip fabrication process, the fracture of chips under thermal shock is the
main factor of InSb FPA chip failure and the yield of InSb FPAs chip has been limited by the high fracture probability. In
this paper, a novel equipment for thermal shock experiment has been designed. Using this equipment, the thermal shock
experiment on InSb FPAs was carried out and the position and distribution of cracks in InSb FPAs chip was obtained. It
was found that thermal mismatch stress and process damage are two main causes responsible for InSb FPAs chip’s
fracture by analyzing crack and process factors. By selecting suitable underfill materials, optimizing the curing process,
controlling the feed rate of wafer cutting,reducing thermal mismatch stress and avoiding the process damage induced in
process, the cracking probability of InSb FPAs chip has been decreased.Thus, the yield of InSb FPAs chip was increased
significantly.
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