Mr. Gilbert Arbez Profile

Gilbert Arbez

at Univ of Ottawa

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 23 September 2010 Paper

Modeling and simulation of triple junction solar cells

Gilbert Arbez, Jeffrey Wheeldon, Alexandre Walker, Karin Hinzer, Henry Schriemer

Proceedings Volume 7750, 775032 (2010) https://doi.org/10.1117/12.876131

KEYWORDS: Instrument modeling, Mathematical modeling, Solar cells, Gallium arsenide, Modeling and simulation, Computer simulations, Physics, Indium gallium arsenide, 3D modeling, Doping

Read Abstract +

Multi-junction solar cells are devices composed of many layers of diverse materials with varying physical properties. Understanding the operation and design of such devices is challenging because of this diversity. To support these efforts, the computer modeling and simulation study is an essential tool. The principles of two main steps in a study, conceptual modeling and simulation modeling, are presented to show their importance in dealing with many materials and their properties. Conceptual modeling deals with establishing physical mathematical models representing the physics of material behaviour. The physical models have parameters whose values are dependent on the material; often parameter models are required to establish the parameter values. Simulation models are the representation of these conceptual models within software. Examining the Sentaurus software products shows that many conceptual models are integrated within the software; proper selection of physical models must be made and parameters defined for the materials used in the device being studied. When considering new materials for improving solar cell design, typically only parameters are set for existing physical models, but it is sometimes necessary to revise the models and modify such software. Band gap modeling of dilute nitrides, in particular InGaAsN demonstrates the importance of considering conceptual modeling and how software must be capable of adapting new simulation physical and parameter models.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years