In EUV lithography, one of problems is defect control, so that the EUV pellicle is required to protect EUV mask from
contaminations. The EUV pellicle should be extremely thin thickness and it is easy to be deformed as wrinkle and
deflection during the manufacturing and exposure process due to structural problems. The deformation can change a
transmission of EUV pellicle. The variation in transmission induces the CD variation on the wafer. In this study, various
structures for EUV pellicle were considered and non-uniform and uniform wrinkles caused by mechanical deformation
were calculated. Even very small wrinkles are amplified by acceleration and even if just deflected pellicle produce the
wrinkles.
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