Mr. Han Geun Yu Profile

Han Geun Yu

at The Pennsylvania State Univ

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Proceedings Article | 1 October 2001 Paper

Fabrication and performance of d33-mode lead-zirconate-titanate (PZT) MEMS accelerometers

Han Yu, Richard Wolf, Kan Deng, Lichun Zou, Srinivas Tadigadapa, Susan Troilier-McKinstry

Proceedings Volume 4559, (2001) https://doi.org/10.1117/12.443027

KEYWORDS: Ferroelectric materials, Electrodes, Capacitors, Microelectromechanical systems, Deep reactive ion etching, Etching, Semiconducting wafers, Thin films, Silicon, Sensors

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Piezoelectric accelerometers fabricated from Lead-Zirconate-Titanate (PZT) thin films are expected to achieve higher sensitivities and better signal-to-noise ratios (SNR) in comparison with capacitive and piezoresistive accelerometers. This paper will present, for the first time, the fabrication and performance of piezoelectric, bulk-micromachined accelerometers using PZT thin films operating in the d₃₃-mode. Using sol-gel techniques, 0.6 mm thick PZT films with high piezoelectric coefficients were deposited. Measurements on these PZT films show a remnant polarization P_r < 19 (mu) C/cm², dielectric constants E_r > 800, and d₃₃ coefficient of 120 pC/N. The PZT accelerometers operating in the d₃₃ mode were successfully fabricated. Interdigitated capacitors were used to achieve the d₃₃ mode of operation and deep reactive ion etching was used to define the proof-mass of the accelerometers. Measurements on these accelerometers show sensitivities ranging from 0.85 - 1.67 mV/g with resonance frequencies ranging from 22.4 - 15.4 kHz respectively. In addition to the improved sensitivity, advantages of d₃₃-mode accelerometers include use of thinner PZT films, and the ability to optimize the impedance of the device to achieve a higher SNR. The performance of MEMS d₃₃-mode accelerometers will also be compare with the previously reported d₃₁-mode accelerometers using PZT thin films.

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