The introduction of the multi-beam mask writer has made it possible to introduce non-Manhattan shapes on photomasks with no write-time penalty compared to the standard rectilinear mask shapes. While it has been known for some time that removing the Manhattan restriction on OPC output not only allows for improved process window, more recently it has also been demonstrated that it improves mask CD uniformity (CDU). When crucial mask rules are followed, most notably a minimum allowable curvature, we assess the CDU changes at the mask level for an MRC-constrained correction, as compared to either Manhattan or unconstrained corrections. An AIMS analysis was performed to estimate the effect at the optical plane. Lastly, we contrast differences in the CDU as transferred to resist in EUV lithography. We conclude with a view as to the challenges left to enabling high-volume manufacturing of all-angle shapes.
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