Multiple-wavelength laser arrays at 1.55 μm are key components of wavelength division multiplexing (WDM) systems
for increased bandwidth. Vertical cavity surface-emitting lasers (VCSELs) grown on GaAs substrates outperform their
InP counterparts in several points. We summarize the current challenges to realize continuous-wave (CW) GaInNAsSb
VCSELs on GaAs with 1.55 μm emission wavelength and explain the work in progress to realize CW GaInNAsSb
VCSELs. Finally, we detail two techniques to realize GaInNAsSb multiple-wavelength VCSEL arrays at 1.55 μm. The
first technique involves the incorporation of a photonic crystal into the upper mirror. Simulation results for GaAs-based
VCSEL arrays at 1.55 μm are shown. The second technique uses non-uniform molecular beam epitaxy (MBE). We have
successfully demonstrated 1x6 resonant cavity light-emitting diode arrays at 850 nm using this technique, with
wavelength spacing of 0.4 nm between devices and present these results.
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