KEYWORDS: Phonons, Semiconductors, Solar cells, Group III-V semiconductors, Group IV semiconductors, Solar energy, Gallium arsenide, Silicon carbide, Chemical species, Binary data
In the framework of hot-carrier solar cell absorber material design, we revisit the LO-phonon decay processes in a wide variety of III-V and group IV binary semiconductors. We present a detailed description of the two-phonon final states, from the exact dispersion relation calculated within the Density Functional Perturbation Theory formalism. We focus on the relation between Klemens surfaces features and atomic mass differences, and the importance of the Ridley channels in some group IV binaries.
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