Widening the range of efficiently emitting wavelengths is a goal of ongoing research on III-nitride LEDs. The so-called green gap is mainly related to the increasing severity of efficiency droop as the wavelength increases. The peak EQE in commercial green LEDs exceeds 60% but corresponds to a very low current density. In this presentation we review challenges in the development of long wavelength III-nitride LEDs. We discuss possible strategies to mitigate droop based on the understanding that nonradiative Auger recombination is the root cause. Finally, we present the current efficiency status of green, yellow and red III-Nitride LEDs.
Efficiency droop and the green gap are challenges to InGaN/GaN light emitting diodes (LEDs). Defects have been suggested to contribute to both effects, so understanding the origin of defects and their impact on LED performance is important to improving efficiency. This talk describes the use of deep level optical spectroscopy (DLOS) to characterize deep level defects in quantum well (QW) and quantum barrier (QB) regions of InGaN LEDs. The spatial dependence of deep level defect density in the MQW region and the evolution of QW deep level defects with indium alloying will be discussed.
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