GaN/AlN quantum dots (QDs) have been observed to emit in deep ultra violet (UV) regime. The emission wavelength
can be tuned from 270 nm to 238 nm using GaN growth time and Ga flux. In this work, tunnel injection GaN/AlN QD
UV LEDs have been fabricated utilizing polarization doped p-n junctions grown on AlN templates on sapphire. The QD
EL emission is obtained at 250 nm whereas a second peak emission is observed at 290 nm from the p-type AlGaN.
However, the enhanced doping and carrier injection in polarization doped structure boosts the deep-UV emission
intensity by 26 times compared to non-polarization doped UV LED.
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