N-type semiconductor is a necessary component for high speed and low power dissipation complementary circuits. However, n-type organic field-effect transistors (OFETs) with both high electron mobility and good ambient stability are rare. In this contribution, we develop a strong electron-deficient small molecule, tetrafluorine benzodifurandione-based oligo(p-phenylenevinylene) (4F-BDOPV), for n-type OFETs. 4F-BDOPV has a low LUMO level down to −4.44 eV and a cofacial packing structure in single crystal. These fea-tures provide 4F-BDOPV with good ambient stability and large charge transfer integrals leading to a high electron mobility of up to 12.6 cm2 V−1 s−1 in air, which is among the highest values for n-type OFETs. This work demonstrates a new molecule system for high-performance air-stable n-type OFETs, which is highly promising for single crystal based electronics.
A novel family of 9,9'-spirobifluorene functionalized head-tail regular n-hexyl-substituted oligothiophenes, which
exhibit good solubility in common organic solvents, has been successfully developed in this contribution. The study of
the redox behavior of the spiro-type molecules indicates that their HOMO and LUMO energy levels are adjusted to
match the electrode work function by varying the attaching oligothiophene moieties and their attaching patterns to 9,9'-
spirobifluorene. The two series of spiro-type oligothiophenes still remained the similar electrochemical properties of
common oligothiophenes while their processability and morphologic stability being improved by the spiro-junction.
A series of blue light-emitting copolymers containing alternative dialkoxy-substituted phenylene group and the fluorene moiety with different functional groups at the C-9 bridge position have been prepared through the Suzuki polymerization in this contribution. The detailed investigation of the optical properties demonstrates that the spectral thermal and optical stability of P1-3 exhibit substantially enhanced resistance to both thermally and optically oxidation by the backbone modification strategy. Moreover, in comparison with P1 and P3, P2 with the spiro-junction shows much higher Tg and significantly improves resistance towards oxidation in the air, indicating that the spiro-junction is a better strategy to prevent the formation of ketonic defects or the migration of the exicitons to these defect sites. These properties have established our desired polymers as a family of promising candidate for optoelectronic applications.
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