Dr. Joachim Piprek
SPIE Involvement:
Conference Program Committee | Author | Editor | Instructor
Area of Expertise:
optoelectronic devices , GaN-based devices , LED light-emitting diodes , semiconductor lasers , numerical simulation , performance optimization
Profile Summary

Experienced researcher, teacher, and consultant in optoelectronics, photonics, and semiconductor devices. Published five books and chaired several conferences in these areas. Provides technical and educational services to corporations and research institutes worldwide.
Publications (37)

Proceedings Article | 22 February 2017 Paper
Proceedings Volume 10098, 100980Q (2017) https://doi.org/10.1117/12.2256129
KEYWORDS: Semiconductor lasers, Gallium nitride, Solid state lighting, Quantum wells, Absorption, Resistance, Waveguides, Electron beam lithography, Laser damage threshold, Temperature metrology

Proceedings Article | 20 February 2017 Paper
Joachim Piprek, Zhan-Ming Simon Li
Proceedings Volume 10107, 101070X (2017) https://doi.org/10.1117/12.2256232
KEYWORDS: Light emitting diodes, Polarization, Photons, Electrons, Energy efficiency, Electrical efficiency, Quantum wells, External quantum efficiency, Temperature metrology, Solids

Proceedings Article | 14 March 2013 Paper
Proceedings Volume 8619, 861910 (2013) https://doi.org/10.1117/12.2004665
KEYWORDS: Optical simulations, Quantum wells, Thermal effects, Waveguides, Thermal blooming, Near field, Semiconductor lasers, High power lasers, Refractive index, Absorption

Proceedings Article | 28 February 2012 Paper
L. Redaelli, M. Martens, J. Piprek, H. Wenzel, C. Netzel, A. Linke, Yu. Flores, S. Einfeldt, M. Kneissl, G. Tränkle
Proceedings Volume 8262, 826219 (2012) https://doi.org/10.1117/12.908368
KEYWORDS: Semiconductor lasers, Laser damage threshold, Waveguides, Etching, Indium gallium nitride, Quantum wells, Electron beam lithography, Diodes, Gallium nitride, Semiconducting wafers

Proceedings Article | 28 February 2012 Paper
Proceedings Volume 8262, 82620E (2012) https://doi.org/10.1117/12.904744
KEYWORDS: Light emitting diodes, Polarization, Electron beam lithography, Magnesium, Doping, Quantum wells, Ionization, Interfaces, Solids, Internal quantum efficiency

Showing 5 of 37 publications
Proceedings Volume Editor (12)

SPIE Conference Volume | 30 April 2015

SPIE Conference Volume | 4 April 2014

SPIE Conference Volume | 11 April 2013

SPIE Conference Volume | 15 March 2012

SPIE Conference Volume | 18 February 2011

Showing 5 of 12 publications
Conference Committee Involvement (42)
Physics and Simulation of Optoelectronic Devices XXXIII
28 January 2025 | San Francisco, California, United States
Physics and Simulation of Optoelectronic Devices XXXII
30 January 2024 | San Francisco, California, United States
Physics and Simulation of Optoelectronic Devices XXXI
31 January 2023 | San Francisco, California, United States
Physics and Simulation of Optoelectronic Devices XXX
24 January 2022 | San Francisco, California, United States
Physics and Simulation of Optoelectronic Devices XXIX
6 March 2021 | Online Only, California, United States
Showing 5 of 42 Conference Committees
Course Instructor
SC822: GaN Optoelectronics: Material Properties and Device Principles
The course focuses on key material properties and essential physical principles of III-nitride semiconductor devices such as light-emitting diodes, laser diodes, and photo detectors. Device design and internal physical mechanism are explained in detail. The impact of material properties and design variations on the device performance is demonstrated using advanced computer simulation. Practical simulation results provide deep insight into device physics, help to understand performance limitations, and enable the development of design optimization strategies.
WS9001: Crosslight Software Inc. Industry Sponsored Workshop: Introduction to Optoelectronic Device Simulation and VCSEL Design
The course introduces design principles of modern optoelectronic devices such as vertical-cavity lasers and nitride light emitters. It includes hands-on exercises and provides basic skills for operating advanced simulation software. Deep insight into micro- and nano-scale physical processes is given using real-world device examples. Key material properties are discussed and strategies for obtaining realistic simulation results are described.
SC596: Computer Simulation of Semiconductor Optoelectronic Devices
The course provides the knowledge required to understand and effectively use advanced simulation software for the design and analysis of optoelectronic devices. Real-world examples of modern devices such as long-wavelength vertical-cavity lasers and nitride light emitters are discussed. Available software packages are compared and strategies for obtaining realistic simulation results are described.
SC801: Optoelectronic Devices: Introduction to Physics and Simulation
The course introduces basic physical principles of semiconductor optoelectronic devices. Key material properties are discussed for a broad array of semiconductor compounds. Modern light emitting diodes, laser diodes, and photodetectors are analyzed using real-world device examples. Deep insight into micro- and nano-scale physical processes is provided by advanced device simulation. Available simulation software is reviewed and strategies for obtaining realistic performance predictions are described.
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