In this research, we presents a novel design for an all-electrical single photon emitter that utilizes a single electron pump and a lateral p-n junction based on an AlGaAs/GaAs heterostructure. The fundamental promise of single photon emission is achieved by injecting one and only one electron into the p-n junction, where one photon is generated after e-h radiative recombination. This ensures an intrinsically on-demand and deterministic single photon source. Up to GHz repetition rate is expected given the single electron pump has demonstrated quantized generation of electrons in the GHz range. We will present some promising stable EL emission after overcoming the charge accumulation problem in our dopant-free architecture.
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