Dr. Jongil Hwang
Vice President of R&D Division at Toshiba America, Inc.
SPIE Involvement:
Author
Publications (1)

Proceedings Article | 27 March 2013 Paper
Jongil Hwang, Rei Hashimoto, Shinji Saito, Shinya Nunoue
Proceedings Volume 8625, 86251G (2013) https://doi.org/10.1117/12.2002707
KEYWORDS: Indium gallium nitride, Quantum wells, Light emitting diodes, Optical properties, Crystals, External quantum efficiency, Luminescence, Gallium nitride, Polarization, Statistical analysis

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