2D materials like transition metal dichalcogenides (TMDCs) are promising materials for the next generation of flexible devices. With low-temperature Atomic Layer Deposition a direct large area deposition of these materials on temperature sensitive substrates becomes possible. Due to these substrates conventional post- and further processing methods, like thermal annealing, are not suitable. With the usage of ultrashort pulsed Laser a moification of these films with very small heat-affected zones can be done. This allows a selective increase of crystallinity in amorphous MoS2 films or phase engineering between the metallic and semiconducting phase in MoS2 independent of the growing substrate.
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