Prof. Jung Han Profile

Prof. Jung Han

at Yale Univ

SPIE Involvement:

Conference Program Committee | Author

Publications (20)

Proceedings Article | 4 March 2022 Presentation + Paper

Use of electrochemistry in mini-/micro-LEDs and VCSELs

Jin-ho Kang, Rami ElAfandy, Bingjun Li, Jie Song, Jung Han

Proceedings Volume 12022, 120220C (2022) https://doi.org/10.1117/12.2611573

KEYWORDS: Gallium nitride, Vertical cavity surface emitting lasers, RGB color model, Etching, Light scattering, Light emitting diodes, Transmittance, Scanning electron microscopy, Absorption, Reflectivity

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Proceedings Article | 5 March 2021 Presentation + Paper

Development of highly reflective mirrors for III-nitrides from green to UV

Jin-Ho Kang, Rami ElAfandy, Jung Han

Proceedings Volume 11686, 116860I (2021) https://doi.org/10.1117/12.2578755

KEYWORDS: Vertical cavity surface emitting lasers, Ultraviolet radiation, Mirrors, Reflectivity, Manufacturing, Solid state lighting, Reflection, Optical communications, Nonimpact printing, Nanoengineering

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Proceedings Article | 5 March 2021 Presentation + Paper

GaN blue vertical-cavity surface-emitting lasers using conductive nanoporous distributed Bragg reflectors

Rami Elafandy, Jin-Ho Kang, Bingjun Li, Tae Kyoung Kim, Joon Seop Kwak, Jung Han

Proceedings Volume 11706, 117061F (2021) https://doi.org/10.1117/12.2577986

KEYWORDS: Vertical cavity surface emitting lasers, Gallium nitride, Distributed Bragg reflectors, Wafer testing, Ultraviolet radiation, UV optics, Projection devices, Optoelectronics, Optoelectronic devices, Optics manufacturing

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Proceedings Article | 4 March 2019 Presentation

GaN-based resonant-cavity light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector (Conference Presentation)

Chia-Feng Lin, Jung Han

Proceedings Volume 10940, 109400M (2019) https://doi.org/10.1117/12.2511394

KEYWORDS: Light emitting diodes, Distributed Bragg reflectors, Reflectivity, Refractive index, Gallium nitride, Wet etching, Optical properties, Ultraviolet radiation, Dielectrics, Vertical cavity surface emitting lasers

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Proceedings Article | 1 March 2019 Presentation + Paper

Development of nanopore-based near ultraviolet vertical-cavity surface emitting lasers

Cheng Zhang, Rami ElAfandy, Jerry Zhang, Songtao Chen, Arto Nurmikko, Jung Han

Proceedings Volume 10918, 109181M (2019) https://doi.org/10.1117/12.2510269

KEYWORDS: Vertical cavity surface emitting lasers, Gallium nitride, Near ultraviolet, Absorption, Reflectivity, Doping, Etching, Mirrors, Ultraviolet radiation, Scanning electron microscopy

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Compared with conventional edge-emitting laser diodes, vertical-cavity surface-emitting lasers (VCSELs) have numerous advantages such as the compatibility with mainstream semiconductor microfabrication, the possibility of on-wafer testing, a better beam profile, the feasibility of arrayed and coherent operation and the possibility of low-power and single-mode operation. While, in the short wavelength, from green and blue to near ultraviolet (530 to 360 nm), only edge-emitting laser diodes are commercially available, the commercialization of III-nitride VCSELs are expected to enable unique applications in mobile display and projection, virtual, augmented, and/or mixed reality, adaptive beam steering, and high-resolution laser printing. The main challenge in the technology of III-nitride VCSELs, however, is the fabrication of planar distributed Bragg reflectors (DBRs) that provide near-unity reflection and thus support the formation of high-quality vertical cavity. While, over the past decade, numerous groups reported VCSEL operations (only in visible spectrum) using epitaxial DBRs (AlGaN/GaN, AlN/GaN, AlInN/GaN) and dielectric DBRs (involving lift-offs or epitaxial lateral overgrowth), the devices commercialization is still hampered by challenging epitaxial growth, complicated fabrication or low thermal management. We report in this paper the use of a nanoporous (Al)GaN medium as an alternative method in the formation of III-nitride VCSELs. Specifically, we will focus on the development of VCSELs with an emission wavelength at 369 nm which is crucial for the realization of next-generation compact atomic clocks. We note that VCSEL operation below 400 nm has never been demonstrated, and we will discuss factors of importance toward this realization, including the formation of near-unity DBR mirrors using nanoporous AlGaN/AlGaN structures, the investigation and control of cavity loss including absorption and scattering, and the formation of intra-cavity current injection, optically-transparent pathways. So far clear single-mode spontaneous emission at 369 nm (linewidth < 2 nm) is observed. We will report the latest result including pulsed characterizations under high level injection.

Proceedings Article | 29 February 2016 Paper

New directions in GaN photonics

Ge Yuan, Cheng Zhang, Kanglin Xiong, Sunghyun Park, Jung Han

Proceedings Volume 9748, 97480Q (2016) https://doi.org/10.1117/12.2214365

KEYWORDS: Gallium nitride, Semiconductor lasers, Reflectivity, Optical pumping, Mirrors, Vertical cavity surface emitting lasers, Etching, Cladding, Indium gallium nitride, Quantum wells

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Proceedings Article | 8 March 2014 Paper

New directions in GaN material research: thinner and smaller

Ge Yuan, Sung Hyun Park, Benjamin Leung, Jung Han

Proceedings Volume 8986, 89860C (2014) https://doi.org/10.1117/12.2040729

KEYWORDS: Gallium nitride, Crystals, Etching, Light emitting diodes, Aluminum nitride, Semiconductors, Silica, Transmission electron microscopy, Diffraction, Electrochemical etching

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Proceedings Article | 12 February 2010 Paper

Nonpolar and semipolar GaN heteroepitaxy on sapphire for LED application

Qian Sun, Jung Han

Proceedings Volume 7617, 761717 (2010) https://doi.org/10.1117/12.847425

KEYWORDS: Gallium nitride, Sapphire, Heteroepitaxy, Reflectivity, Palladium, Diffraction, Light emitting diodes, X-rays, Liquid crystal lasers, Scanning electron microscopy

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Proceedings Article | 3 September 2009 Paper

Epitaxial science of GaN: nanowires, quantum dots, and mesoscopic morphology

Q. Sun, C. Yerino, B. Leung, J. Han

Proceedings Volume 7406, 74060L (2009) https://doi.org/10.1117/12.829140

KEYWORDS: Gallium nitride, Crystals, Quantum dots, Epitaxy, Metalorganic chemical vapor deposition, Scanning electron microscopy, Process control, Nanostructures, Nanowires, Nanorods

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Proceedings Article | 13 October 2006 Paper

A compact aerosol sensor and spectroscopic sorting with UV LEDs

Kristina Davitt, Yoon-Kyu Song, William Patterson, Arto Nurmikko, Yong-Le Pan, Richard Chang, Maria Gherasimova, Jung Han, Patrick Cobler, Paul Butler, Vincent Palermo, Remis Gaska

Proceedings Volume 6398, 63980B (2006) https://doi.org/10.1117/12.687307

KEYWORDS: Particles, Luminescence, Light emitting diodes, Sensors, Ultraviolet light emitting diodes, Atmospheric particles, Ultraviolet radiation, Aerosols, Digital signal processing, Optical spheres

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Proceedings Article | 22 February 2006 Paper

UV LEDs for fluorescence detection of biological particles: from materials to applications

M. Gherasimova, J. Han, Y.-K. Song, A. Nurmikko, Y.-L. Pan, R. Chang

Proceedings Volume 6134, 61340H (2006) https://doi.org/10.1117/12.659611

KEYWORDS: Light emitting diodes, Luminescence, Aluminum, Gallium, Particles, Magnesium, Ultraviolet light emitting diodes, Fluorescence spectroscopy, Optical filters, Stereolithography

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Proceedings Article | 20 October 2004 Paper

Performance and application of high-power ultraviolet AlGaInN light-emitting diodes

Jung Han, Seong-Ran Jeon, Maria Gherasimova, Jie Su, George Cui, Hongbo Peng, Eleni Makarona, Yiping He, Yoon-Kyu Song, Arto Nurmikko, Ling Zhou, Werner Goetz, Michael Krames

Proceedings Volume 5530, (2004) https://doi.org/10.1117/12.566891

KEYWORDS: Ultraviolet light emitting diodes, Light emitting diodes, Gallium, Quantum wells, External quantum efficiency, Aluminum, Ultraviolet radiation, Luminescence, Electroluminescence, Aluminum nitride

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Proceedings Article | 12 June 2002 Paper

GaN-based tunnel junction in optical devices

Tetsuya Takeuchi, G. Hasnain, Scott Corzine, Mark Hueschen, Richard Schneider, Christophe Kocot, M. Blomqvist, Ying-Lan Chang, D. Lefforge, Michael Krames, Lou Cook, Steve Stockman, J. Han, M. Diagne, Yi-Fei He, E. Makarona, Arto Nurmikko

Proceedings Volume 4646, (2002) https://doi.org/10.1117/12.470561

KEYWORDS: Light emitting diodes, Doping, Gallium nitride, Vertical cavity surface emitting lasers, Indium gallium nitride, Quantum wells, Magnesium, Indium nitride, Silicon, Optical components

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Proceedings Article | 17 April 2000 Paper

Design and performance of nitride-based UV LEDs

Mary Crawford, Jung Han, Weng Chow, Michael Banas, Jeffrey Figiel, Lei Zhang, Randy Shul

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382842

KEYWORDS: Gallium nitride, Quantum wells, Light emitting diodes, Ultraviolet light emitting diodes, Indium gallium nitride, Ultraviolet radiation, Cladding, Active optics, Electroluminescence, Heterojunctions

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Proceedings Article | 22 June 1998 Paper

MOCVD growth of AlGaN UV LEDs

Jung Han, Mary Crawford

Proceedings Volume 3419, 341907 (1998) https://doi.org/10.1117/12.311042

KEYWORDS: Metalorganic chemical vapor deposition, Ultraviolet light emitting diodes, Quantum wells, Diodes, Reflectometry, Ultraviolet radiation, Light emitting diodes, Gallium nitride

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Proceedings Article | 11 April 1996 Paper

State of blue-green laser diodes

Jung Han, Robert Gunshor, Arto Nurmikko

Proceedings Volume 2772, (1996) https://doi.org/10.1117/12.238105

KEYWORDS: Semiconductor lasers, Pulsed laser operation, Quantum wells, Continuous wave operation, Cladding, Laser damage threshold, Nitrogen, Vertical cavity surface emitting lasers, Electroluminescence, Doping

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Proceedings Article | 21 December 1994 Paper

Microstructure study of failure mechanism of II-VI blue-green laser diodes

Guo-Chun Hua, Donald Grillo, Jung Han, Mike Ringle, Yongping Fan, Robert Gunshor, Minna Hovinen, Arto Nurmikko, Nobuo Otsuka

Proceedings Volume 2346, (1994) https://doi.org/10.1117/12.197263

KEYWORDS: Semiconductor lasers, Quantum wells, Electroluminescence, Transmission electron microscopy, Microscopy, Laser development, Gallium arsenide, Head, Heterojunctions, Continuous wave operation

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Proceedings Article | 21 December 1994 Paper

Physics of gain and stimulated emission in II-VI diode lasers

J. Ding, Vladimir Kozlov, P. Kelkar, A. Salokatve, Arto Nurmikko, Jung Han, Donald Grillo, Mike Ringle, Robert Gunshor

Proceedings Volume 2346, (1994) https://doi.org/10.1117/12.197249

KEYWORDS: Semiconductor lasers, Excitons, Quantum wells, Absorption, Spectroscopy, Optical pumping, Laser damage threshold, Physics, Laser optics, Oscillators

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Proceedings Article | 21 December 1994 Paper

Issues of epitaxial growth and transport for room temperature cw blue/green laser diodes

Mike Ringle, Donald Grillo, Yongping Fan, Guo-Chun Hua, Jung Han, Robert Gunshor

Proceedings Volume 2346, (1994) https://doi.org/10.1117/12.197264

KEYWORDS: Semiconductor lasers, Gallium arsenide, Sulfur, Nitrogen, Temperature metrology, Magnesium, Pyrometry, Continuous wave operation, X-rays, Zinc

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Proceedings Article | 11 May 1994 Paper

Epitaxial growth of quaternary (Zn,Mg)(S,Se) for pseudomorphic separate confinement heterostructure (SCH) laser structures

L. He, Donald Grillo, Jung Han, Yongping Fan, Mike Ringle, S. Clark, Robert Gunshor, Heonsu Jeon, A. Salokatve, Arto Nurmikko, Guo-Chun Hua, Nobuo Otsuka

Proceedings Volume 2140, (1994) https://doi.org/10.1117/12.175785

KEYWORDS: Semiconductor lasers, Cladding, Transmission electron microscopy, Continuous wave operation, Quantum wells, X-ray diffraction, Heterojunctions, Diffraction, Gallium arsenide, Computer simulations

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Showing 5 of 20 publications

Proceedings Volume Editor (1)

SPIE Conference Volume | 21 September 2006

Advanced LEDs for Solid State Lighting

Conference Committee Involvement (20)

Gallium Nitride Materials and Devices XX

27 January 2025 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIX

29 January 2024 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVIII

30 January 2023 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVII

24 January 2022 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVI

6 March 2021 | Online Only, California, United States

Gallium Nitride Materials and Devices XV

4 February 2020 | San Francisco, California, United States

Low-Dimensional Materials and Devices 2019

11 August 2019 | San Diego, California, United States

Low-Dimensional Materials and Devices 2018

22 August 2018 | San Diego, California, United States

Gallium Nitride Materials and Devices XIII

29 January 2018 | San Francisco, California, United States

Low-Dimensional Materials and Devices 2017

9 August 2017 | San Diego, California, United States

Gallium Nitride Materials and Devices XII

30 January 2017 | San Francisco, California, United States

Low-Dimensional Materials and Devices 2016

30 August 2016 | San Diego, California, United States

Low-Dimensional Materials and Devices

12 August 2015 | San Diego, California, United States

Nanoepitaxy: Materials and Devices VI

19 August 2014 | San Diego, California, United States

Nanoepitaxy: Materials and Devices V

25 August 2013 | San Diego, California, United States

Nanoepitaxy: Materials and Devices IV

15 August 2012 | San Diego, California, United States

Nanoepitaxy: Materials and Devices III

24 August 2011 | San Diego, California, United States

Quantum Sensing and Nanophotonic Devices VIII

23 January 2011 | San Francisco, California, United States

Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II

1 August 2010 | San Diego, California, United States

Advanced LED for Solid-State Lighting (Special Symposium)

5 September 2006 | Gwangju, South Korea

Showing 5 of 20 Conference Committees

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