Mr. Kexin Chen Profile

Kexin Chen

at Univ. of Electronic Science and Technology of China

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Publications (2)

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Proceedings Article | 1 November 2021 Paper

Photoelectronic synaptic performance of SiOy/a-Si1-xRux bilayer based memristors

K. Chen, Z. Yang, C. Li, J. Wang, P. Gu, N. Ilyas, X. Jiang, D. Gu, W. Li

Proceedings Volume 12057, 1205725 (2021) https://doi.org/10.1117/12.2605742

KEYWORDS: Doping, Optoelectronic devices, Amorphous silicon, Synaptic plasticity, Semiconductor materials, Ruthenium

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Neuromorphic computing refers to one of the most promising choices to solve the von Neumann bottleneck. The key to develop neuromorphic computing is to make the device able of simulating biological synaptic behavior. Optically stimulated synaptic devices have the advantages of fast speed and low energy consumption. Many materials including carbon group materials, oxide materials and 2D materials have been used to make photoelectronic synaptic devices. However, most of the devices can only respond by violet and/or ultraviolet light stimulation, and very few of them can work in the near-infrared range. Here, we report an optoelectronic synaptic device based on SiO_y/a-Si_1-xRu_x bilayer memristive materials. By doping with ruthenium (Ru), the optical bandgap of amorphous silicon (a-Si) film could be engineered, making the doped a-Si_1-xRu_x film infrared sensitive. Therefore, a-Si_1-xRu_x film can effectively absorb light illumination in a wideband range from 450 nm to 905 nm. Many photoelectronic synaptic behaviors including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF) and short-term plasticity (STP) to long-term plasticity (LTP) transition, have been simulated successfully by using different light spikes at wavelengths of 450 nm, 635 nm and 905 nm, respectively. We refer the obtained synaptic plasticities to originate from the trapping and de-trapping of photogenerated carriers by light-induced defects inside the silicon oxide (SiO_y) which was deposited directly on a-Si_{1- x}Ru_x film, and to the generation of electron-hole pairs from the underlying a-Si_1-xRu_x film. Our newly fabricated optoelectronic synaptic device shows a great application potential in neuromorphic computing.

Proceedings Article | 1 November 2021 Paper

Ag:SrTiO3/CuAlO2 based photoelectronic synapse for artificial vision system

Z. Yang, K. Chen, C. Li, J. Wang, P. Gu, N. Ilyas, X. Jiang, D. Gu, W. Li

Proceedings Volume 12057, 1205723 (2021) https://doi.org/10.1117/12.2605738

KEYWORDS: Optoelectronic devices, Visual system, Synaptic plasticity, Amorphous semiconductors

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Memristors are emerging and being considered to be used as candidates to realize multiple bio-synaptic plasticities and to act in the developed neuromorphic computing systems. Simulating the human visual neural network is an effective way to build a new generation of artificial visual systems and a realistic method to break the von Neumann bottleneck. In this article, we report for the first time a newly proposed and fabricated oxide-based optoelectronic synaptic device with a structure of ITO/Ag:SrTiO₃/CuAlO₂/ITO, and demonstrate its diverse synaptic plasticities. It is found that the device can respond light stimulation from visible to near-IR (450 nm-905 nm) wavelengths, and also can exhibit interestingly various synaptic behaviors including short-term plasticity (STP), paired-pulse facilitation (PPF), long-term plasticity (LTP) and the transition from STP to LTP, respectively. More importantly, our optoelectronic synaptic device has successfully simulated several artificial vision properties as image memory, image preprocessing and color recognition. It is worth acknowledging that our optoelectronic synaptic device has a simple structure of ITO/Ag:SrTiO₃/CuAlO₂/ITO and an excellent synaptic behavior, showing a potential to be used in the artificial vision and neuromorphic computing systems in the near future.

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