In this paper we demonstrate the efficiency of porous anodic alumina (PAA) to confine the growth of silicon
nanowires (SiNWs). High-density arrays of parallel, straight and organized SiNWs have been realized, by Hot Wire
Chemical Vapor Deposition (HW-CVD) growth process inside PAA templates with electrodeposited copper as catalyst.
The PAA was made by the anodization of an aluminium layer, followed by the catalysts electrodeposition at the bottom
of the pores. Subsequently, SiNWs were grown in a modified HW-CVD reactor with SiH4 as the precursor gas. The
morphology and the structure of the wires have been investigated by SEM and TEM, and their collective electrical
behavior has been characterized with a 2-probes device.
We successfully synthesized organized Carbon nanotubes (CNTs) and Silicon Nanowires (SiNWs) arrays using LPAA.
This approach can yield very dense assemblies of nano-objects with a planar-type organization compatible with existing
tools inherited from advanced microelectronic processes and adapted to electronic devices as field effect transistors,
interconnects, sensors, etc. CNTs/SiNWs were grown using Hot-filament Chemical Vapor Deposition (HFCVD) within
lateral-type porous anodic alumina. We demonstrate that the pulsed electrodeposition of metal nanoparticles to be further
used as catalysts inside the membranes requires specific thinning and pore widening process to remove the alumina
barrier layer located at the bottom of the pores. The growth of CNTs was found to strongly depend on the
electrodeposition conditions as well as on the CVD parameters. In addition, we found that introducing atomic hydrogen
(generated using a hot-wire) as etching agent was essential to prevent parasitic carbon/silicon deposition on the surface
of PAA or on the wall of pores and to improve CNTs/NWs growth. Such organized CNTs/SiNWs arrays are very
promising as advanced microelectronic devices and their potentiality for photosensing applications were investigated.
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