We present the development of SOI waveguides with low-loss (~1.5 dB/cm) single-moded guidance over an octave of frequency. Broadband single-moded guidance is needed for on-chip mid-infrared spectroscopy and this cannot be provided by conventional waveguide geometries in standard material platforms. The reported waveguides require a simple fabrication process flow and will be widely applicable to different mid-infrared wavelength bands for a variety of sensing applications. We further present a low-loss bend design (0.179 ± 0.031 dB/90°) that overcomes the inherently large bending loss of the waveguides, which is a limiting factor in the utility of the waveguides. We consider different prospective designs for the use of these waveguides in a circuit for a sensing device.
In this work, a coupling strategy between mid-index SiNx and high-index active waveguides on the same silicon chip is proposed. To that aim, a sophisticated proof-of-concept integration between N-rich SiN and SOI micrometric waveguides is demonstrated achieving a <0.5 dB coupling for both TE/TM polarisations. The optical tunability of SiNx allows the mitigation of the mid-high refractive index discrepancy by interposing a SiO2/Si-rich SiN double-layer anti-reflective coating, attaining back-reflections close to −20 dB. On that basis, it is shown numerically that a sub-dB interconnection between multiple-quantum well/dot stratified stacks and a silicon nitride passive waveguide is achievable, while keeping the introduced back-reflection level below −30 dB.
Silicon nitride (SiNx), has been widely regarded as a CMOS photonics enabling material, facilitating the development of low-cost CMOS compatible waveguides and related photonic components. We have previously developed an NH3-free SiN PECVD platform in which its optical properties can be tailored. Here, we report on a new type of surface-emitting nitrogen-rich silicon nitride waveguide with antenna lengths of L < 5 mm. This is achieved by using a technique called small spot direct ultraviolet writing, capable of creating periodic refractive index changes ranging from -0.01 to -0.04. With this arrangement, a weak antenna radiation strength can be achieved, resulting in far-field beam widths < 0.0150, while maintaining a minimum feature size equal to 300 nm, which is compatible with DUV scanner lithography.
We are demonstrating the use of Low temperature PECVD silicon nitride based materials used for applications ranging from non-linear functionalities in the C band, wavelength division multiplexing in the O band and post fabrication light based refractive index tuning for in-situ device trimming. These materials are demonstrated for waveguide ranging from 300 nm up to 1 micron in thickness with refractive indices varying between 1.9 and 2.55.
Silicon nitride (SiNx), an associated CMOS photonics enabling material, provides a promising and complementary photonic platform for the development of low-cost CMOS compatible waveguides and related photonic components. We propose a 16 element - 2D scanning optical phased array circuit based on a Si-rich core, which reconciliates the requirements of power handling and field-of-view for automotive LiDAR. This dispersive optical phased array consists of wavelength-dependent grating coupler antenna arrays and spiral-delay lines that allow achieving a field-of-view of (35°x 17°) and an angular resolution of (0.15°x1.2°).
The growing demand for fast, reliable and low power interconnect systems requires the development of efficient and scalable CMOS compatible photonic devices, in particular optical modulators. In this paper, we demonstrate an innovative electro absorption modulator (EAM) developed on an 800 nm SOI platform; the device is integrated in a rib waveguide with dimensions of a 1.5 μm x 40 μm, etched on a selectively grown GeSi cavity. High speed measurements at 1566 nm show an eye diagram with dynamic ER of 5.2 dB at 56 Gbps with a power consumption of 44 fJ/bit.
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