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Masoomeh Ghasemian
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Publications (1)
Proceedings Article | 15 October 2012 Paper
An improved SOI MESFET with triple-recessed drift region for electrical performance improvement
Ali Orouji, Masoomeh Ghasemian, Amirhossein Aminbeidokhti, Soude Rahmaninezhad
Proceedings Volume 8549, 85490U (2012) https://doi.org/10.1117/12.927400
KEYWORDS: Field effect transistors, Fourier transforms, Capacitance, Neodymium, Silicon, Oxides, Doping, Promethium, Ions, Alternate lighting of surfaces
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