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Dr. Matthias Kauer
at Sharp Labs of Europe Ltd
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Publications (4)
Proceedings Article | 16 March 2015 Paper
A metallic hot carrier photovoltaic cell
Proceedings Volume 9358, 935810 (2015) https://doi.org/10.1117/12.2077573
KEYWORDS: Electrons, Metals, Solar cells, Absorption, Semiconductors, Solar energy, Thin films, Silver, Photovoltaics, Group IV semiconductors
Proceedings Article | 8 February 2007 Paper
Long lifetime cw InGaN laser diodes by molecular beam epitaxy
M. Kauer, W. S. Tan, S. Hooper, J. Barnes, J. Heffernan
Proceedings Volume 6473, 64730Y (2007) https://doi.org/10.1117/12.696721
KEYWORDS: Semiconductor lasers, Continuous wave operation, Gallium nitride, Indium gallium nitride, Metalorganic chemical vapor deposition, Waveguides, Molecular beam epitaxy, Quantum wells, Laser damage threshold
Proceedings Article | 22 February 2006 Paper
Characteristics of CW violet laser diodes grown by MBE
J. Heffernan, M. Kauer, S. Hooper, V. Bousquet, J. Windle, T. Smeeton, J. Barnes
Proceedings Volume 6133, 61330O (2006) https://doi.org/10.1117/12.646047
KEYWORDS: Continuous wave operation, Semiconductor lasers, Gallium nitride, Laser damage threshold, Aluminum, Cladding, Waveguides, Quantum wells, Sapphire, Indium gallium nitride
Proceedings Article | 1 April 2005 Paper
InGaN laser diodes by molecular beam epitaxy
M. Kauer, J. Heffernan, S. Hooper, V. Bousquet, K. Johnson, C. Zellweger
Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.597027
KEYWORDS: Semiconductor lasers, Gallium nitride, Indium gallium nitride, Laser damage threshold, Waveguides, Sapphire, Molecular beam epitaxy, Optoelectronic devices, Aluminum, Gallium
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