Dr. Maximilian Albert Profile

Dr. Maximilian Albert

at Carl Zeiss SMT GmbH

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Author

Publications (6)

SPIE Journal Paper | 8 October 2024

Quantitative access to phase effects in high numerical aperture extreme-ultraviolet photomasks using aerial image metrology

Matthias Roesch, Grizelda Kersteen, Andreas Verch, Maximilian Albert, Philip Heringlake, Klaus Gwosch, Renzo Capelli

JM3, Vol. 23, Issue 04, 044001, (October 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.4.044001

KEYWORDS: 3D mask effects, Light sources and illumination, Extreme ultraviolet, Diffraction, Phase shifts, Extreme ultraviolet lithography, 3D modeling, 3D image processing, Simulations, Metrology

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Proceedings Article | 18 September 2024 Paper

Quantitative access to phase effects in High-NA photomasks using AIMS EUV

Matthias Roesch, Grizelda Kersteen, Andreas Verch, Maximilian Albert, Philip Heringlake, Klaus Gwosch, Renzo Capelli

Proceedings Volume 13273, 132731G (2024) https://doi.org/10.1117/12.3029952

KEYWORDS: 3D mask effects, Light sources and illumination, Extreme ultraviolet, Diffraction, 3D image processing, 3D modeling, Phase shifts, Simulations, 3D metrology, Extreme ultraviolet lithography

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Proceedings Article | 10 April 2024 Poster + Paper

High-NA mask phase-effects studied by AIMS EUV

Matthias Roesch, Grizelda Kersteen, Andreas Verch, Maximilian Albert, Philip Heringlake, Klaus Gwosch, Renzo Capelli

Proceedings Volume 12953, 129531F (2024) https://doi.org/10.1117/12.3010001

KEYWORDS: 3D mask effects, Light sources and illumination, Extreme ultraviolet, Simulations, 3D image processing, Extreme ultraviolet lithography, Reticles, Metrology, Image analysis, Diffraction

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In parallel to the development of EUV lithography equipment and processes towards High-NA there is a still growing interest to study and understand the role of 3D mask absorber driven effects on imaging. Alongside with appropriate exposure and patterning techniques, the choice of a suitable mask absorber material has large impact on the process window optimization. The development of solutions to the challenges combined with the EUV reflective mask typically is based on rigorous imaging simulations, but aerial image metrology can be a supplementary way to verify the role of mask 3D effects on lithography. For that purpose, the ZEISS AIMS EUV actinic mask measurement represents a unique and variously usable way for the qualification of the current as well as the next generation High-NA mask printing performance under scanner-equivalent optical column conditions. In this paper, we show results of AIMS® EUV measurements at Ta-based absorber masks where we identify a significant impact of mask 3D driven phase shifts on the aerial images. For a standard High-NA dipole setting, the intensity profiles of a dense 18 nm vertical lines and spaces structure show an initially unexpected line splitting through focus that can be reproduced by rigorous imaging simulations. In contrast, no splitting is found if the experiment is described within a 2D model. A follow-up experiment on a similar dense vertical 20 nm lines and spaces clip with dedicated monopole illumination demonstrates a prominent asymmetric line splitting for each of the single pole positions, again in accordance with simulation. For a center monopole setting we see a frequency doubling of the aerial image for one particular focus position. To describe the aerial image behavior, we applied an analytical model for three-beam-imaging in the presence of defocus and mask 3D effects. Consequently, the observed through-focus behavior can be explained by various phase shifts to the three-beam imaging cross-terms involved.

Proceedings Article | 10 April 2024 Presentation + Paper

High-NA benefit assessment through Zeiss AIMS EUV for tip-to-tip patterning by EUVL

Rik Jonckheere, Tatiana Kovalevich, Vincent Wiaux, Vicky Philipsen, Eric Hendrickx, Andreas Verch, Maximillian Albert, Renzo Capelli

Proceedings Volume 12953, 1295304 (2024) https://doi.org/10.1117/12.3011615

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Tantalum, Optical lithography, Scanners, Semiconducting wafers, Design, Logic

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Proceedings Article | 12 December 2023 Poster + Paper

Aerial imaging (AIMS) based computational lithography model calibration and mask metrology for high-NA EUV

Nitesh Pandey, Stefan Hunsche, Adam Lyons, Christoph Hennerkes, Andreas Verch, Maximilian Albert, Grizelda Kersteen, Renzo Capelli, Werner Gillijns, Balakumar Baskaran, Joost Bekaert

Proceedings Volume PC12751, PC127510Z (2023) https://doi.org/10.1117/12.2688109

KEYWORDS: Calibration, Metrology, Scanning electron microscopy, Data modeling, Extreme ultraviolet, Critical dimension metrology, Semiconducting wafers, Computational lithography, Design, Optical proximity correction

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Proceedings Article | 22 November 2023 Presentation

ZEISS AIMS EUV high-NA for actinic mask review for the next EUV scanner generation

Klaus Gwosch, Renzo Capelli, Matthias Roesch, Robert Nicholls, Bruno Langbehn, Michael Mohn, Andreas Verch, Maximilian Albert, Grizelda Kersteen, Alexander Winkler, Carolin Müller, Sven Krannich

Proceedings Volume PC12750, PC127500O (2023) https://doi.org/10.1117/12.2687495

KEYWORDS: Extreme ultraviolet lithography, Scanners, Extreme ultraviolet, Imaging systems, Semiconducting wafers, Printing, Photomasks, Metrology, Lithography, Light sources and illumination

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Showing 5 of 6 publications

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