Ferroelectric thin films are used as high dielectric constant capacitors, infrared detectors, piezoelectric transducers,
optical modulators, optical waveguides, and nonvolatile memory chips for dynamic random access memory (DRAM)
etc. While ferroelectric and dielectric properties of these films have been extensively investigated, their optical properties
have been comparatively less studied and of limited use in quantitative evaluation of multilayer thin films. In this work
we explored the variable angle spectroscopic ellipsometry (VASE) technique for its effectiveness in physical property
characterization. The VASE combined with its computer modeling tool enables nondestructive, nonintrusive, and
contactless optical means for optical characterization. Crystalline Lead Zirconium Titanate PbZr0.52Ti0.48O3 (PZT) thin
films, fabricated on SrTiO3 layer atop of Si substrates, were characterized using VASE (J.A. Woollam; Lincoln, NE,
USA) by determining the ellipsometric parameters Ψ and Δ as a function of wavelengths (200-1000 nm) and incident
angles (65°, 70°,75°) at room temperature. A physical representation of the multilayer system was constructed by a six
layer model (analysis software WVASE32, J.A. Woollam) through a step-by-step method. Other physical properties
characterized by several well-known techniques on structure, morphology and topographical features correspond well
with the models developed using VASE alone. The technique and the methodology developed have shown promises in
identifying the respective thickness and optical properties of multilayer thin film system, with limited input of processing
or composition information.
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