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Md. Iqbal Hossain
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Publications (1)
Proceedings Article | 15 October 2012 Paper
Theoretical Study of drain current of AlInN/GaN HEMTs on SiC Substrate
Proceedings Volume 8549, 85490S (2012) https://doi.org/10.1117/12.927259
KEYWORDS: Field effect transistors, Dielectric polarization, Heterojunctions, Silicon carbide, Gallium nitride, Polarization, Aluminum nitride, Aluminum, Sapphire, Gallium
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