We have been developing nanoimprint templates for the next-generation sub-20nm nanofabrication technology, with
particular emphasis on duplicate fabrication of quartz templates created from Si masters. In general, the narrowing of
pattern line widths is accompanied by concerns about whether resist will sufficiently fill such lines. Our development has
concentrated on the filling property of resist in narrow lines and on pattern shape after release from the mold. Our
findings indicated that pattern formability differs according to the type of resist monomer. We inferred that these
differences are manifested in such behaviors as resist shrinkage after or during release of the mold. Using a novel resist
that has good formability, we pursued quartz template duplication that employs UV-NIL. As a result, we demonstrated
HP20nm quartz pattern formation using the duplication process. We were also verified NIL resist pattern resolution of
HP17.5nm.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.