KEYWORDS: Avalanche photodetectors, Ionization, Gallium arsenide, Data modeling, Avalanche photodiodes, FDA class I medical device development, FDA class II medical device development, Physics, Electronics, Performance modeling
The electron initiated avalanche gain and bandwidth are calculated for thin submicron GaAs n+-i-p+ avalanche
photodiode. A model is used to estimate the avalanche build-up of carriers in the active multiplication layer considering
the dead-space effect. In the model, the carriers are identified both by their energy and position in the multiplication
region. The excess energy of the carriers above threshold is assumed to be equally distributed among the carriers
generated after impact ionization. The gain versus bias and bandwidth versus gain characteristics of the device are also
demonstrated for different active layer thicknesses of the APD.
In this paper, we present a theoretical analysis of gated mode single photon avalanche detector (SPAD) that quantifies
the contribution of different parameters to the single photon quantum efficiency (SPQE).The study gives the variation of
SPQE of SPAD with dark count probability for different parameters such as pulse repetition rate, hold-off time, pulse
width for constant photon intensity which reveals that there exists an optimum value of Pd for which SPQE is maximized.
In this paper, the frequency response of a VLSI compatible Si-CMOS p-i-n photodetector suitable for high-speed, lowvoltage
operation is studied. The model is developed considering the effects of diffusion of carriers from the substrate
region and the parasitic elements due to the presence of multiple diodes in lateral configuration. The current density is
calculated considering square-area photodetector. Results indicate the possibility of optimum designs to maximize 3dB
bandwidth.
Energy eigenvalues and density of states of carriers in a finite barrier triangular quantum wire embedded inside a
rectangular quantum wire are numerically investigated using finite difference technique (FD-Q). Time-independent
Schrödinger’s equation is solved with appropriate boundary conditions for computation of lowest three eigenstates. The
wire is made of lower bandgap GaAs material surrounded by wider bandgap AlxGa1-xAs, and the analysis is carried out
by taking into consideration of the conduction band discontinuity and effective mass mismatch at the boundaries. The
eigenvalues and the density of states are plotted as function of wire dimension and mole fraction (x). The results are also
compared with those obtained using rectangular quantum wire.
We calculate the short-circuit current density for an AlxGa1-xAs-GaAs multi-quantum well (MQW) solar cell by solving
the rate equations and considering the effects of lifetime, escape time, capture time and transport time of carriers. The
contributions from bulk and well regions of the cell are calculated separately. Short-circuit current density and efficiency
are computed and plotted for different material and device parameters. Results indicate that the active layer thickness can
be optimally chosen to obtain the maximum conversion efficiency keeping other parameters unchanged.
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