Dr. Pavlina Choleva Profile

Dr. Pavlina Choleva

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Publications (2)

SPIE Journal Paper | 28 October 2021

Multi-beam mask writer exposure optimization for EUV mask stacks

Peter Hudek, Michal Jurkovic, Pavlina Choleva, Witold Wroczewski, Masahiro Hashimoto, Kazunori Ono, Toru Fukui, Toshiya Takahashi, Kotaro Takahashi

JM3, Vol. 20, Issue 04, 041402, (October 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.4.041402

KEYWORDS: Photomasks, Extreme ultraviolet, Point spread functions, Photoresist processing, Extreme ultraviolet lithography, Scattering, Monte Carlo methods, Lithography, Electron beam lithography, Backscatter

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Proceedings Article | 22 February 2021 Presentation

MBMW exposure optimization for EUV mask stacks

Peter Hudek, Michal Jurkovic, Pavlina Choleva, Witold Wroczewski, Masahiro Hashimoto, Kazunori Ono, Toru Fukui, Toshiya Takahashi, Kotaro Takahashi

Proceedings Volume 11610, 116100T (2021) https://doi.org/10.1117/12.2584588

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Scattering, Point spread functions, Photoresist processing, Numerical simulations, Lithography, Chemically amplified resists

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EUV Lithography makes substantial progress in optimizing (i) tool, (ii) mask blanks, and (iii) resist materials to support the next generation EUV imaging performance. Novel EUV masks use a variety of absorbers and capping layers fabricated on mirroring multilayer stacks coated on ULE substrate. 50 keV electron multi-beams are used to write high-resolution patterns in an appropriate resist coated over the absorber layer stack. The main goal of multi-beam mask writing (MBMW) has been the precise geometry control and faithful reproduction of the intended pattern on the substrate. The highly conform MBMW resist-patterning process needs to understand the absorbed intensity distribution from the electron scattering in the resist/substrate stack, as well as the consecutive radiation-chemical effects induced by the electron energy spread together with the nonlinear dissolution behavior of the resist. It is difficult to exactly calculate the relative contribution of these factors separately, but their overall effect can be modeled by the analytic 'point spread' response function (PSF) for the resist. The ultimate resolution is determined by the amount of laterally- and back-scattered electrons from specific target compositions. These interaction events cause proximity, fogging, local heating, and surface charging effects, defining the accurate pattern. Simulations have shown alterations in the absorbed energy distributions of EUV masks with different stacks, and the experiments approved the results from the calculations. We present results of resist response to the electron multi-beam exposure based on statistical numerical simulation on different EUV-stacks directly compared with the corresponding numerical lithographic parameters extracted from the experimental resist screening. Consequently, all input parameters for MBMW writing corrections were precisely specified to the corresponding absorbed energy distribution signature of the concrete EUV mask. The experiments were performed with the IMS MBMW-101 ALPHA tool in a high dose positive-tone chemically amplified resist (pCAR), provided by FUJIFILM, and coated on experimental EUV masks containing different novel stack compositions as prepared at HOYA Corporation.

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