With an annual volume of more than 5 million units of 2" equivalent substrates, GaN-based LED is the main eater of nitride materials targeting a $3.5B market at devices level. The next big challenge for LED business is to take market shares over the general lighting industry and dollar per lumen ($/lm) ratio is the key parameter. Numerous technological improvements are under investigation:
- At die level, photonic crystals and surface texturing technologies are jointly developed to increase the light extraction. External Quantum Efficiency EQE has now reached > 75% at R&D level.
- At material level, there is a rapid emergence of new substrates for GaN epitaxy and composite substrates in 6" diameter.
That is opening new doors to higher LED luminous efficiency and cost reduction toward the gigantic SSL general illumination business.
A simple method for controlling the thickness of PtSi for infrared detectors is presented. Thicknesses of PtSi in the range of 2 - 5 nm can be controlled via the reaction kinetics of the silicidation. Compared to conventional furnace anneal, the thickness and homogeneity of the resulting PtSi-layers are independent of the deposited Pt-thickness. Superior uniformity, lower continuous film thicknesses of the PtSi-layers, and smoother PtSi/Si-interfaces than possible by conventional furnace anneal are achieved by applying this technique.
A cophasing system architecture has been derived for an imaging multi-aperture optical space interferometer. This system is based on cophasing on a guide star. Breadboarding and testing of the main part of the system, with emphasis on the critical items (delay line, cophasing interferometer, Optical Path Difference (OPD retrieval methods), has provided an evaluation of the expected performance. This paper describes the reference interferometry mission used for the study, the overall OPD stabilization concept, the cophasing system and associated OPD restitution algorithms, and the first test results.
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