Dr. Qian Fan Profile

Dr. Qian Fan

Ph.D. Student at Ostendo Technologies Inc

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Author

Publications (14)

Proceedings Article | 11 March 2011 Paper

Two-dimensional drift-diffusion simulation of GaN HFETs

Qian Fan, Hadis Morkoç

Proceedings Volume 7939, 79391O (2011) https://doi.org/10.1117/12.877336

KEYWORDS: Gallium nitride, Polarization, Field effect transistors, Semiconductors, Heterojunctions, Transistors, Electron transport, Device simulation, Light emitting diodes, Indium nitride

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Proceedings Article | 11 March 2011 Paper

Etching formation of GaN micro optoelectronic device array

Qian Fan, Frank Lee, Kameshwar Yadavalli, Michael Lee, Chih-Li Chuang, Hussein El-Ghoroury

Proceedings Volume 7939, 793913 (2011) https://doi.org/10.1117/12.878579

KEYWORDS: Etching, Gallium nitride, Wet etching, Dry etching, Optoelectronic devices, Reactive ion etching, Semiconductor lasers, Plasma etching, Semiconducting wafers, Crystals

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Proceedings Article | 20 February 2009 Paper

Electrical defects in AlGaN and InAlN

D. Johnstone, Jacob Leach, Vladimir Kovalskii, Qian Fan, Jingqiao Xie, Hadis Morkoç

Proceedings Volume 7216, 72162R (2009) https://doi.org/10.1117/12.815020

KEYWORDS: Gallium nitride, Capacitance, Temperature metrology, Spectroscopes, Aluminum, Diodes, Semiconductors, Heterojunctions, Spectroscopy, Metalorganic chemical vapor deposition

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Proceedings Article | 20 February 2009 Paper

Two dimensional electron gas in GaN heterojunction field effect transistors structures with AlN spacer

Qian Fan, Jacob Leach, Jinqiao Xie, Umit Ozgur, Hadis Morkoç, L. Zhou, D. Smith

Proceedings Volume 7216, 72162N (2009) https://doi.org/10.1117/12.811678

KEYWORDS: Aluminum nitride, Gallium nitride, Heterojunctions, Polarization, Field effect transistors, Data modeling, Metals, Scanning transmission electron microscopy, Nickel, Fluctuations and noise

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Proceedings Article | 20 February 2009 Paper

Transient current spectroscopy of lattice matched InAlN/AlN/GaN HFETs for identification of traps resulting in gate lag

J. Leach, Q. Fan, J. Xie, M. Wu, Ü. Özgür, H. Morkoç

Proceedings Volume 7216, 72162L (2009) https://doi.org/10.1117/12.809795

KEYWORDS: Field effect transistors, Aluminum nitride, Gallium nitride, Measurement devices, Reliability, Spectroscopes, Spectroscopy, Temperature metrology, Heterojunctions, Heart

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Proceedings Article | 20 February 2009 Paper

Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures

Bo Xiao, Jinqiao Xie, Vitaliy Avrutin, Qian Fan, Mo Wu, Hadis Morkoç

Proceedings Volume 7216, 72162M (2009) https://doi.org/10.1117/12.811671

KEYWORDS: Ferroelectric materials, Field effect transistors, Electrodes, Heterojunctions, Gallium nitride, Modulation, Semiconductors, Ferroelectric capacitors, Thin films, Switching

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Proceedings Article | 16 February 2009 Paper

Reduction of efficiency droop in InGaN-based blue LEDs

X. Ni, X. Li, J. Xie, Q. Fan, R. Shimada, Ü. Özgür, H. Morkoç

Proceedings Volume 7216, 72161W (2009) https://doi.org/10.1117/12.809877

KEYWORDS: External quantum efficiency, Light emitting diodes, Electroluminescence, Quantum efficiency, Indium gallium nitride, Quantum wells, Doping, Gallium, Blue light emitting diodes, Luminous efficiency

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Proceedings Article | 16 February 2009 Paper

Investigation of vertical current-voltage characteristics of Al(Ga)N/GaN RTD-like heterostructures

J. Lee, Q. Fan, X. Ni, U. Ozgur, V. Litvinov, H. Morkoç

Proceedings Volume 7216, 72160S (2009) https://doi.org/10.1117/12.809435

KEYWORDS: Gallium nitride, Aluminum nitride, Heterojunctions, Doping, Resistance, Epitaxial lateral overgrowth, Quantum wells, Metalorganic chemical vapor deposition, Reactive ion etching, Polarization

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Proceedings Article | 28 February 2008 Paper

Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETS

Qian Fan, Jacob Leach, Mo Wu, Bo Xiao, Xing Gu, Hadis Morkoç, Peter Handel

Proceedings Volume 6894, 689426 (2008) https://doi.org/10.1117/12.763688

KEYWORDS: Dielectrics, Ferroelectric materials, Silica, Zirconium dioxide, Transistors, Heterojunctions, Gallium nitride, Plasma enhanced chemical vapor deposition, Capacitance, Crystals

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Proceedings Article | 15 February 2008 Paper

AlGaN/SiC heterojunction bipolar transistor

Ya. Alivov, Q. Fan, X. Ni, S. Chevtchenko, I. Bhat, H. Morkoç

Proceedings Volume 6894, 68941W (2008) https://doi.org/10.1117/12.763143

KEYWORDS: Heterojunctions, Transistors, Silicon carbide, Gallium nitride, Aluminum, Metalorganic chemical vapor deposition, Diodes, Doping, Gallium, Electrical engineering

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Proceedings Article | 20 February 2007 Paper

Electrical characteristics of n-ZnO/n-6H-SiC heterostructures grown by rf-sputtering

Ya. Alivov, B. Xiao, Q. Fan, D. Johnstone, C. Litton, H. Morkoç

Proceedings Volume 6474, 64740F (2007) https://doi.org/10.1117/12.713217

KEYWORDS: Zinc oxide, Heterojunctions, Silicon carbide, Diodes, Temperature metrology, Spectroscopes, Spectroscopy, Light emitting diodes, Capacitance, Fluctuations and noise

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Proceedings Article | 8 February 2007 Paper

Current-transport mechanisms of isotype n-ZnO/n-GaN heterostructures

Ya. Alivov, X. Bo, Q. Fan, S. Akarca-Biyikli, D. Johnstone, O. Lopatiuk, L. Chernyak, C. Litton, H. Morkoç

Proceedings Volume 6474, 64740E (2007) https://doi.org/10.1117/12.706300

KEYWORDS: Heterojunctions, Zinc oxide, Temperature metrology, Gallium nitride, Diffusion, Diodes, Metalorganic chemical vapor deposition, Vapor phase epitaxy, Electron beams, Fluctuations and noise

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Proceedings Article | 3 March 2006 Paper

Recovery of GaN surface after reactive ion etching

Qian Fan, S. Chevtchenko, Xianfeng Ni, Sang-Jun Cho, Hadis Morko

Proceedings Volume 6121, 61210Q (2006) https://doi.org/10.1117/12.646856

KEYWORDS: Gallium nitride, Etching, Reactive ion etching, Plasma, Luminescence, Ions, Wet etching, Nitrogen, Annealing, Diodes

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Proceedings Article | 3 March 2006 Paper

Ferroelectric PZT/AlGaN/GaN field effect transistors

Youn-Seon Kang, Bo Xiao, Ya. Alivov, Qian Fan, Jinqiao Xie, Hadis Morko

Proceedings Volume 6121, 61210S (2006) https://doi.org/10.1117/12.657584

KEYWORDS: Ferroelectric materials, Field effect transistors, Gallium nitride, Silicon, Aluminum, Metalorganic chemical vapor deposition, Heterojunctions, Semiconductors, Modulation, Annealing

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Showing 5 of 14 publications

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