32-channel hybrid III-V/silicon laser arrays operating at C-band with 100GHz wavelength spacing are designed and simulated. Each channel of the hybrid III-V/silicon laser arrays includes III-V/silicon waveguide gain region with lateral sampled Bragg grating (LSBG) on silicon waveguide for selecting a single longitudinal mode, tapered III-V/silicon waveguide coupling region and silicon waveguide light output region. Light generated by III-V active region evanescently couples to the silicon waveguide, and outputs from the silicon waveguide. The seed grating’s period of LSBG is fixed and varing the sampled grating period of LSBG for selecting wavelength. The transfer matrix method is used to simulate LSBG’s parameters of hybrid III-V/silicon laser arrays. The simulation results show that 32- wavelengths are selected successfully by LSBG when the sampling grating periods are between 4.6 μm and 6.9 μm while the seed grating is fixed at 251 nm. Besides, the tapered III-V/silicon waveguide coupling region is designed and simulated by eigenmode expansion method of commercial software to convert the light spot size and increase the coupling efficiency from III-V to silicon waveguide. By optimizing the parameters, the coupling efficiency is up to 90% while hybrid III-V/silicon tapered waveguide length is fixed at 400μm
A three-dimensional tapered silicon-based spot-size converter is studied to improve the butt-jointed efficiency between the laser diode and the single-mode silicon waveguide. This kind of the spot-size converter can be fabricated while the ridge waveguide is etched. There is no need to regrow SiN or SiON on silicon. The optimized coupling efficiency between the spot-size converter and laser diode is over 0.8 at the wavelength of 1550 nm. This spot-size converter is useful for silicon photonics.
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