The Low-light image sensor is the photoelectric detector for imaging in the environment of full month illumination and lower illumination. The main detector types include the electrical gain detector represented by EMCCD, the optical gain detector represented by MCP detector, and the latest scientific CMOS image sensor (sCMOS). EMCCD uses high voltage electric field to multiply electrons after photoelectric conversion, so as to improve photoelectric conversion sensitivity. MCP uses high voltage electric field to multiply electrons converted by photo-cathode materials, which improves the photon flux of dim targets, and thus improves the sensitivity of detector to dim targets in low light environment. Scientific CMOS image sensor is proposed in recent years that does not rely on external structure, and obtains high sensitivity by optimizing CMOS pixel technology, pixel structure and readout circuit noise level. Based on the optical and electrical parameters of the these kinds of low light level detectors, this paper analyzes the calculation methods of SNR of the these kinds of low light level detectors in detail, and expounds the theoretical characteristics and application fields of the these kinds of low light level detectors.
Low light detectors refer to photodetectors that perform imaging in lunar and lower illumination environments. The main types of detectors include electrical gain type detectors represented by EMCCD, photoelectric gain type detectors represented by Microchannel Panel (MCP) ICCD, and the latest scientific level CMOS image sensor (sCMOS). Enhanced low light detectors are more suitable for target detection and edge bright spot detection applications. Extremely dim targets can exceed the noise threshold with extremely high gain, so that the target will not be submerged in noise. Scientific grade CMOS image sensors are more suitable for array low light imaging applications, with better imaging quality than enhanced low light detectors. This article calculates the MTF based on the optical and electrical parameters of the low light detector. The comprehensive MTF at the Nyquist frequency of the three low light detectors are 0.48, 0.13, and 0.63, respectively.
In the field of CMOS image sensors research, the design and application of Low-Voltage Differential Signaling (LVDS) drivers are key to achieving efficient video signal transmission. As the frequency of LVDS signals continues to increase, issues of signal loss and attenuation during long-distance cable transmission have become more prominent, posing greater challenges to the performance stability of LVDS drivers. This paper establishes a model for CMOS image sensor LVDS drivers and transmission lines, detailing the attenuation mechanisms of LVDS transmission lines and their impact on differential signal transmission. The study focuses on methods for matching the design of LVDS drivers with transmission line characteristics, while also analyzing the interaction mechanisms between the operating states of MOS transistors in the circuit and key variables of the RLGC transmission line model. Using 1Gbps LVDS data and a 20cm flexible transmission ribbon cable as an example, the effectiveness of the matching method was validated through simulation experiments. This method provides technical support for the reliable design of high-speed LVDS drivers in image sensors or other chips, and offers useful references for the engineering selection of LVDS high-frequency transmission lines.
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