With the decrease in pitch in the line/space patterning, micro-bridge defects have become the
major defect in the immersion applications. As a result, reducing micro-bridge defect count is one of
the key tasks for mass production of semiconductor devices using immersion lithography for both
topcoat and non-topcoat processes. In this paper, we focus on the non-topcoat approach particularly
the embedded barrier layer (EBL) technology. The advanced EBL materials discussed in this
paper have demonstrated to be able to reduce total defect including micro-bridge defect count to the
same level as that of a topcoat process. It was found that the developer solubility of the EBL
materials in both bright and dark fields and the contrast of the EBL materials play important roles for
reducing overall defectivity.
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