We review recent progress made on the hybrid silicon platform towards realizing an integrated high speed WDM
transmitter on silicon. Using ion implantation enhanced quantum well intermixing, four band gaps are integrated on a
single chip and used to demonstrate a DFB laser array operating over 200 nm from 1250 to 1450 nm. Results from an
independent effort to improve on hybrid silicon EA modulator performance are also described. Together these
demonstrations pave the way to realize a terabit transmitter on silicon.
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