Unspecified Siew L Tan Profile

Siew L Tan

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Publications (5)

Proceedings Article | 28 August 2014 Paper

High-sensitivity silicon nanowire phototransistors

Siew Li Tan, Xingyan Zhao, Yaping Dan

Proceedings Volume 9170, 917002 (2014) https://doi.org/10.1117/12.2061190

KEYWORDS: Phototransistors, Silicon, Diodes, Photodetectors, Semiconducting wafers, Ion implantation, Doping, Electrons, Electron beam lithography, Nanowires

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Proceedings Article | 24 October 2012 Paper

Short-wave infrared GaInAsSb photodiodes grown on GaAs substrates

Andrew R. Marshall, Kalyan Nunna, Siew Li Tan, Charles Reyner, Baolai Liang, Anitha Jallipalli, John P. David, D. Huffaker

Proceedings Volume 8541, 85410F (2012) https://doi.org/10.1117/12.974765

KEYWORDS: Gallium indium arsenide antimonide phosphide, Photodiodes, Gallium antimonide, Gallium arsenide, Sensors, Short wave infrared radiation, Infrared radiation, Diodes, Infrared photography, Etching

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Proceedings Article | 21 February 2012 Paper

Dilute nitride GaInNAs and GaInNAsSb for solar cell applications

Siew Li Tan, Wai Mun Soong, Matthew Steer, Shiyong Zhang, Jo Shien Ng, John David

Proceedings Volume 8256, 82561E (2012) https://doi.org/10.1117/12.910349

KEYWORDS: Doping, Gallium arsenide, Solar cells, Diodes, External quantum efficiency, Lamps, Diffusion, Annealing, Light sources, Photons

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Proceedings Article | 13 October 2010 Paper

Dry etching and surface passivation techniques for type-II InAs/GaSb superlattice infrared detectors

Siew Li Tan, Yu Ling Goh, Sankha dip Das, Shiyong Zhang, Chee Hing Tan, John P. David, Nutan Gautam, Hasul Kim, Elena Plis, Sanjay Krishna

Proceedings Volume 7838, 783814 (2010) https://doi.org/10.1117/12.864787

KEYWORDS: Etching, Dry etching, Gallium antimonide, Plasma, Indium arsenide, Superlattices, Reactive ion etching, Photoresist materials, Silica, Infrared detectors

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Proceedings Article | 14 May 2010 Paper

Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing

Siew Li Tan, Lionel J. Tan, Yu Ling Goh, Shiyong Zhang, Jo Shien Ng, John P. David, Igor Marko, Jeremy Allam, Stephen Sweeney, Alfred Adams

Proceedings Volume 7726, 77261M (2010) https://doi.org/10.1117/12.853912

KEYWORDS: Semiconducting wafers, Annealing, Doping, Oxygen, Calcium, Gallium arsenide, Nitrogen, Photodetectors, Molecular beam epitaxy, Luminescence

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