The poster will report the Laser Induced Damage Threshold of an amplifier medium immersed in an active cooling system, and with different protocols, as 1on1 and Son1 procedures to evaluate the influence of the cooling system on the laser damage resistance. Some theoretical investigations will also be reported in order to explain the different experimental observations.
Chalcogenide Phase-Change Materials (PCMs), mainly GeSbTe-based alloys, have already been widely used for optical data storage in DVD-RAM or CD-RW. Thanks to their unique reversible and very fast amorphous to crystalline phase transition which is characterized by an uncommon huge change in optical and electrical properties, PCMs are now extensively studied aiming at developing innovative emerging non-volatile memories such as phase change random access memory (PCRAM) or storage class memories (SCM) in order to replace current dominant Flash memory technology [1]. The interaction of PCMs with a fs light pulse has attracted significant attention due to fundamental interest since the possible non-thermal amorphous↔crystal phase transition could be used as a process to drive the phase change above the thermal “speed limits” [2]. Our experiments address the investigation of ultra-fast phenomena of fundamentals laser-material interaction.
Frequency domain interferometry (FDI) [3] is a pump-probe experiment that gives access to the variation of the refractive index of a material. A pump pulse (25 fs, 800 nm, 1kHz) is used to trigger a phase transition. The probe beam is made of two pulses (120 fs, 532 nm) delayed by 9 ps in our case which are focused on the pump/sample interaction point. The first probe pulse impinges the surface of the sample before the pump pulse, and is thus reflected on the unperturbed material, while the second one that arrives after the pump pulse, is reflected on the pump-heated material. Both pulses are then sent in a spectrometer where they interfere in the frequency domain. The intensity variation and phase shifts in the interference pattern (right image in the fig. 1) can be used to retrieve variations of the optical constant of the heated material. The interference pattern is simultaneously measured for the S ans P polarization independently.
The samples are amorphous GeSbTe-based thin film deposited by magnetron sputtering in a 200 mm industrial deposition tool at in the LETI clean-rooms. A 10 nm thick SiN capping layer of hwas been coated deposited on top of the GST films in order to prevent surface oxidation.
We will present the results obtained on prototypical PCMs thin films, i.e. Ge2Sb2Te5 and GeTe. Experiments have been conducted in the fluence range (from 17 to 31 mJ/cm2 ) allowing us to trigger the amorphous to crystal phase transition. Dynamics on the sub-ps time scale shows a very rapid switch mainly attributed to the real part of the refractive index. The polarisation resolved FDI permits to foster information on the behaviour of the surface. A clear phase shift is attributed to a contraction, in the nm range, and the sub-ps time scale. The results presented will be discussed and compared to on-going ab-initio simulations.
[1] P. Noé et al., “Phase Change Materials for Non-Volatile Memory devices: From Technological Challenges to Materials Science Issues”, Topical Review in Semicond. Sci. Technol., to be published (2017).
[2] D. Loke et al. “Breaking the Speed Limits of Phase-Change Memory” Science 336, 1566 (2012)
[3] J.P. Geindre et al., “Frequency-domain interferometer for measuring the phase and amplitude of a femtosecond pulse probing a laser-produced plasma” Optics Letters 19, 1997 (1994).
Experimental results of femtosecond Laser Assisted Bioprinting (LAB) are reported on. Two set-up, used to print different model bioinks and keratinocytes cells line HaCaT, were studied: first one was using a femtosecond laser with low pulse energy and an absorbing gold layer, whereas the second one used high pulse energy enabling the removal of the absorbing layer. Printed drop diameter and resulting height of the bioink jet are then quantified as a function of the LAB parameters such as laser energy, focus spot location or numerical aperture.
Solid material damaging induced by an intense and short electromagnetic pulse is accompanied by structural modifications, such as solid/solid phase transition, solid/liquid phase transition or ablation. In such an interaction, the energy is mainly absorbed by electrons, and then transferred to the lattice over a 1 − 10 ps time scale. Such out-of-equilibrium physics is the subject of intense experimental and theoretical work, rising fundamental questions about the thermal or non-thermal nature of phase transitions, the softening or hardening of chemical bonds, and the competition between thermal ablation and coulomb explosion. Here, an experimental technique based on pump-probe interfero-polarimetry in reflection, is presented. It allows us to measure the reflectivity and phase shift of an optical probe reflecting on the sample, in both P and S polarization directions, with a sub-100 fs time resolution. The accuracies on phase shift and on reflectivity are 10 mrad and 1%, respectively. These quantities depend on both the sample optical properties (dielectric function) and the heated sample hydrodynamics. Careful comparison of signals in P and S polarizations allows us to distinguish between optical properties and hydrodynamics contributions. Optical properties give information about the dynamics of the electron properties which drive the damage formation, while the hydrodynamic contribution includes sample surface motion and modofication of the electron density profile, at the nanometer scale. This interfero-polarimetry technique was employed to study damage on aluminum induced by an infrared ultrashort laser pulse (800 nm, 30 fs, 1 J:cm-2)
We report on an experimental investigation of the noise properties of an free-running, high-power, picosecond Nd:YVO4 oscillator pumped by a 100 W laser diode. The amplitude noise has been measured with a photodiode and an electronic
spectrum analyser, and then compared with other mode-locked oscillator's noise spectrum. We show that in terms of
noise properties, our powerful oscillator is comparable with low-power oscillators such like low-noise Ti:Sapphire
oscillators. We also show that the frequency doubling does not affect the amplitude noise of the oscillator. High power
diode pumping is then not an issue to get low-noise high-power oscillators.
We report on a high-power, passively mode-locked, TEM00 Nd:YVO4 oscillator with adjustable pulse duration between
46 and 12ps. The laser is end-pumped by an 888nm laser diode and mode-locking is achieved with a semiconductor
saturable absorber mirror (SESAM). The laser has a repetition rate of 91MHz and the M2 beam quality factor is better
than 1.2 at 15ps. At the optimum output coupler, it provides a maximum average output power of 45W with 32ps pulse
duration. In literature, the presence of spatial hole burning (SHB) often helps to shorten the pulse length down to few
picoseconds. However, SHB might be an issue for some specific application requiring e.g. low noise picosecond
oscillators. In this contribution, we demonstrate that it is possible to shorten the pulse duration by lowering the
intracavity losses without SHB. Pulse tunability from 46 to 12ps is achieved by changing the output coupler of the cavity
while staying in the continuous-wave mode-locked regime. Pulse duration is almost linear with the output coupler
transmission and increases from 12 to 32ps with average output power ranging from 15 to 45W. In this range of output
power, we demonstrate the shortest pulses directly from a Nd:YVO4 oscillator.
We report on the first experimental demonstration of high order harmonic generation in rare gases directly
from a high power Ytterbium doped fiber chirped pulse amplification system. The laser delivers 270 fs pulses
in the 30-100 μJ energy range at repetition rate varying from 100 kHz to 1 MHz. A proper focalization allows
reaching several 1013W/cm2 in the gas jet. We have been able to produce and detect harmonics up to order 31
in Ar, Kr, and Xe at 100kHz repetition rate. Harmonic generation at 1 MHz is also demonstrated in Xe up to
harmonic 15.
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