Cu(In,Ga)Se2 (CIGS) solar cells are leading candidates for low-cost and high-efficiency solar cells. A band gap energy
(Eg) of CIGS can be controlled from 1.0 eV (CuInSe2) to 1.7 eV (CuGaSe2). The Eg of CIGS can be adjusted to the
theoretically estimated optimum value of 1.4 eV. However, maximum efficiencies for CIGS solar cells were achieved at
Eg=1.1~1.2 eV. A higher-Ga addition degrades the electronic properties of CIGS films. Compared to CIGS,
Cu(In,Al)Se2 (CIAS) can be adjusted the same Eg by a small Al addition. We report on the fabrication of the CIAS film
on Mo/soda-lime glass (SLG) substrate by a three-stage evaporation process. The film composition was
Cu/(In+Al)=0.89, Se/Metal=0.99 and Al/(In+Al)=0.15. The Eg of the film was 1.15 eV from the quantum efficiency
measurement. The cross-sectional scanning electron microscope image of the film showed a grain size of approximately
1μm. The composition depth profile by secondary ion mass spectroscopy showed the V-shape distribution of Al in the
depth direction. The CIAS solar cell consisted of Al/ITO/ZnO/CdS/CIAS/Mo/SLG was fabricated. The active cell area
was 0.12 cm2. A current-voltage measurement under illumination (AM1.5, 100mW/cm2) at 25°C showed the area
efficiency of 13.1% without antireflection coating.
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