CONFERENCE PROCEEDINGS
Advanced Search
Tomasz Szymanski
at Wroclaw Univ of Technology
SPIE Involvement:
Author
Publications (1)
Proceedings Article | 25 July 2013 Paper
The influence of MOVPE process parameters on the buffer resistivity used in AlGaN/GaN heterostructures
T. Szymański, M. Wośko, B. Paszkiewicz, R. Paszkiewicz
Proceedings Volume 8902, 89022D (2013) https://doi.org/10.1117/12.2031051
KEYWORDS: Gallium nitride, Heterojunctions, Reflectivity, Capacitance, Field effect transistors, Mercury, Dielectric spectroscopy, Vapor phase epitaxy, Metals, Sapphire
SIGN IN TO:
  • View contact details
UPDATE YOUR PROFILE
Is this your profile? Update it now.
Sign into your SPIE.org account
Don’t have a profile and want one?
Create an account on SPIE.org
Advertisement
Advertisement
Back to Top