GeTe/Sb2Te3 superlattice-like (SLL) structure, consisting of alternating thin layers of two different phase-change materials, GeTe and Sb2Te3, were grown by magnetron sputtering technique on silicon (100) and polycarbonate substrates. The optical and thermal properties as well as the structural characterization of the film were investigated. Ellipsometric spectroscopy showed that the optical constants could be modulated by changing the ratio and period of the SLL structure in the range of 400 to 800 nm. Differential scanning calorimeter (DSC) measurements indicated SLL structure to have lower activation energy than that of the mGeTe-nSb2Te3 pseudobinary with the same ratio. X-ray diffraction (XRD) analysis shows that Ge2Sb2Te5 was formed at the GeTe/Sb2Te3 interface after laser-induced crystallization.
A multiplayer effective-medium (ML-EM) model is proposed to characterize the microstructure of chalcogenide phase-change thin films grown by magnetron sputtering. Spectroscopic ellipsometric (SE) measurements are carried out on the as-deposited Ge2Sb2Te5 films with various thicknesses ranging from 5.8 to 38.9 nm in the photon-energy region 1.5 to 3.1 eV. The measured data of ellipsometric angles (relative amplitude Ψ and phase difference ▵) are compared with the calculated data of ML-EM model with the help of Levenberg-Marquardt (LM) method. The composition depth profiles, including Ge2Sb2Te5, void and Si, are obtained. The dependence of optical constants on the film thickness is attributed to the various distributions of the compositions in the film.
Multi-level recording on rewritable phase change optical disk was studied using a simulation and experiments. The possibility of using multi-level reflection effects to increase the storage capacity was considered using a computer simulation software called phase change optical disk design. Optical and thermal simulations were carried out on disks with phase change material GeSbTe to study its performance. Using a suitable disk structure, the mark shapes of various sizes that give rise to multi-level reflection effects were written on the disk and examined. In order to solve the problem of the difference in the absorption between the crystalline and amorphous states, a thermal compensation layer of Sb was used. Simulation and experiment results have shown that the effect of the difference can be significantly reduced by the thermal compensation layer.
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