This paper studied semiconductor parameters for the thermal effect of laser to the others quadrants when the millisecond-pulsed laser interacted with one quadrant of the Si-based p-i-n QPD. The thermal model and intrinsic carrier model were built on the basis of the semiconductor physics and thermal conduction theory, and a 3-D simulation model was built by the method of finite element, using COMSOL Multi-physics simulation software. It was taken into consideration that when the carrier was mainly derived from impurity ionization, the intrinsic carrier concentration is lower than impurity concentration at least an order of magnitude, it means that the concentration of intrinsic carrier is no more than 5×1014cm-3, and Si-Based semiconductor detector limit working temperature is 520K. The concentration distribution of intrinsic carrier and temperature distribution of all quadrants of QPD were simulated, and got rules which they changed over time. The conclusion was gotten, the thermal-induced failure time of the other quadrants of QPD decreased with the increase of laser energy density under the same laser spot. The thermal-induced failure time of the others quadrants of QPD extended with the increase of the lengths from every quadrant to the point of peak energy when the laser energy density was same. This paper provided important data basis for further research on the study of the interaction between laser and silicon-based semiconductor detectors.
In this paper, we established a two-dimensional spatial axisymmetric finite element model to simulate the laser-supported absorption wave(LSAW) induced millisecond multiple pulsed laser on aluminum alloy, made theoretical investigation. And the finite element analysis software, COMSOL Multiphysics, was utilized in the research. we simulated the generation and propagation procedure of LSAW based on hydrodynamic theory. All the important physical process were considered in the model which were inverse bremsstrahlung, thermal radiation, heat conduction and thermal convection. We simulated aluminum alloy irradiated by long pulse laser with 35J energy, 1ms pulse width and 1mm spot radius in the case of different pulse number, we first obtain the simulation result of velocity fields and temperature fields of LSAW, the results showed that there was a certain temperature cumulative effect near target material; Aiming at obtaining the relationship between the generation time of LSAW and laser pulse number. We keep the laser pulse width, energy density and pulse frequency unchanged, the pulse number was 3, 5, 10 respectively; the results showed that the generation time of LSAW become shorter by increasing the laser pulse number. The results of the study can be applied in the laser propulsion and laser enhancement technology, etc.
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