The Al(Ga)InAs metamorphic buffers grown by metal organic chemical vapor deposition (MOCVD) on GaAs substrates with miscut angles toward (111)A exhibit anisotropic properties in the two <110> directions. The dislocation distributions of samples were examined using X-ray rocking curve along two orthogonal <110> directions and the measurement results suggested that Ga incorporation can reduce the density of α dislocation. There is an inflection point of substrate miscut above which the type of higher dislocation density switched from α to β types, while Ga incorporation can change the location of the inflection point.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.