Mr. Yao Shuai Profile

Yao Shuai

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Proceedings Article | 5 August 2009 Paper

Optimization of (100)-Si TMAH etching for uncooled infrared detector

Y. Shuai, C. Wu, W. Zhang, Y. Li, X. Liu, J. Zhu

Proceedings Volume 7383, 73830H (2009) https://doi.org/10.1117/12.834985

KEYWORDS: Etching, Silicon, Infrared detectors, Thin films, Silicon films, Anisotropic etching, Sensors, Surface roughness, Chemical elements, Scanning electron microscopy

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The influences of concentration of the Tetra-methyl ammonium hydroxide (TMAH) solution together with oxidizer additions were studied in order to optimize the anisotropic silicon etching in the development of a fabrication process for Ba_0.65Sr_0.35TiO₃ (BST) pyroelectric thin film infrared detectors. The detector active element was consisted of capacitance NiCr/BST/Pt and the thin silicon suspending membrane. The later one was formed by bulk anisotropically etching of the (100)-Si wafer. Both solution concentration and oxidizing agent were tuned in order to obtain an optimum etching process. Some improvements such as higher etch rate and lower surface roughness have been obtained by the addition of ammonium peroxide sulfate ((NH₄)S₂O₈) as oxidizing agent under different conditions. The examination of etching speed and surface topography were performed by step surface profiler and scanned electronic microscopy. Furthermore, a simple approach was developed to fabric BST pyroelectric thin film detector based on the optimized TMAH etching parameters. A BST thin film capacitance was formed on a thin silicon membrane, where high sensitivity D* of 9.4×10⁷cm•Hz^1/2/W was measured.

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