It is very important to increase light extraction efficiency in LED structure design. The antireflection film
technology is a simple and cost-cutting method. In this paper, we proposed a SiON layer as an antireflection coating
deposited on the surface of the conventional AlGaInP LED which can be used to improve the performance of the chip. In
the conventional AlGaInP LED, ITO thin film was deposited as current spreading layer. The propagation of lights
through these layers was analyzed by transfer matrix method. The thicknesses of ITO and SiON layers have been
optimized. SiON film was deposited by PECVD. The results of the experiments showed that optical power increased by
11.38% after LED packaged. The difference of peak wavelength between the two samples was less than 1nm.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.