The structures consisting of Ge-nanoclusters grown on silicon oxide layer are promising candidates for optoelectronics
as well as for nonvolatile memory circuits . This is due to their infrared photoluminescent and photoconductive
properties. Crystalline germanium nanoclusters (NCs) are grown by a molecular-beam epitaxy technique on chemically
oxidized Si(100) surface at 700°C. It was shown that structures with Ge-nanoclusters, grown on silicon surface
characterized by fluctuations of the electrostatic field, that determined of positive charge trapped by dimensional
quantum states Ge nanoclusters and Ge-nanoclusters/Si interface traps. Field effect on lateral conductivity and
photovoltage spectra in Ge-nanostructures were analized.
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