Ms. Yurong Cui Profile

Yurong Cui

at Shanghai Institute of Technical Physics

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Proceedings Article | 1 November 2016 Paper

Studies on different passivation on InAs/GaSb type-II superlattice photodetectors

Yurong Cui, Jianxin Chen, Zhicheng Xu, Jiajia Xu, Yi Zhou, Li He

Proceedings Volume 10157, 101573K (2016) https://doi.org/10.1117/12.2247485

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As a promising candidate for the next generation of infrared detection and imaging, more and more studies are focused on the type-II InAs/GaSb superlattice recently. In this paper, we studied different passivation techniques and the dielectric film-semiconductor interface properties for InAs/GaSb superlattice photodetectors. We found that with Si₃N₄ passivation, the R₀A of the superlattice detector decreased from 2.8×10⁵Ωcm² to 12Ωcm² at 80K after a process of rapid thermal annealing (RTA) at 250°C for 60s. Excessive surface charge of 6.15×10¹²cm^-2 was measured from a gate-controlled structure. Meanwhile, the SiO₂ passivated devices can sustain its electrical performance after the RTA process.

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