An economical way to extract semiconducting single-walled carbon nanotubes from common single-walled carbon nanotubes by the liquid-phase exfoliation method was demonstrated. Using the extracted samples as a saturable absorber, a passively Q-switched Nd : YVO4 laser was realized, delivering a pulse duration of 83 ns at a repetition rate of 290 kHz, resulting in a maximum peak power of 1.3 W. Such an outstanding saturable absorption might be caused by high diameter concordance and semi-conducting property.
This work proposes a two-step phase-shifting algorithm as an improvement of fringe projection profilometry. Considering the working process of fringe projection, the captured fringe image is formulated with two variables, i.e. surface reflectivity and phase value. And a phase shift of 3π/2 is introduced to get the two-step phase-shifting. After appropriate variable substitution, expressions of two fringe images can be transformed into two equations corresponding to a line and a circle respectively. With this circle-line model, the characteristic of solution and the phase error due to non-zero ambient light are analyzed. Then the approach of error compensation is proposed based on estimation of the real fringe contrast and non-linear least square optimization. The validity of the proposed approach is demonstrated with both simulations and experiments.
The modulation frequency characteristics of the Q-switched envelope in a doubly Q-switched and mode-locked Nd:GGG laser with an acousto-optic modulator (AOM) and Cr4+:YAG saturable absorber are given. At a fixed incident pump power, the repetition rates of the Q-switched envelope and the related laser characteristics versus the modulation frequency of AOM for different small signal transmissions of Cr4+:YAG saturable absorbers have been measured. The experimental results show that the repetition rates of the Q-switched envelope, the average output power, the average peak power, and the pulse widths of the Q-switched envelopes are subharmonics of the modulation frequency at a fixed incident pump power. Furthermore, the mechanism for these behaviors is discussed.
First principles calculations based on the plane wave pseudo-potential method have been carried out to study effects of intrinsic point effects in GaAs saturable absorbers on the related electronic structures and optical properties. The defect energy levels corresponding to each kind of the intrinsic point defect and their electron occupancy are analyzed from the aspects of band structure and partial density of states (PDOS). Furthermore, the impacts on the optical properties of GaAs saturable absorbers made by the native point defects are also obtained. It can be found that the absorption edges of the GaAs with VGa defect, VAs defect or GaAs defect exhibit substantial redshifts, which is mainly attributed to the defect energy levels in the band gap, and the absorption coefficient of the GaAs crystal with VGa defect, VAs defect or GaAs defect is bigger than those with other defects in near-infrared range. The dielectric function and the refractive index of GaAs crystal with VGa defect, VAs defect or GaAs defect show redshifts in near-infrared region too. The analysis of the optical properties of GaAs crystal with intrinsic point defects will be helpful in guiding the application of the GaAs crystal as saturable absorber in solid-state laser.
First-principles calculations are performed for the effects of the intrinsic defects in GaAs saturable absorber, using the
state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional to correct the band gap.
The defect energy levels corresponding to all point defects and their electrical characteristics are analyzed from the aspects
of density of states and band structures. Furthermore, the partial band decomposed charge density of the defect bands are
also been studied. The relationships between defect energy levels and EL2 deep-level defect will be helpful in ascertaining
the origin of the EL2 deep-level defect in GaAs.
As an intrinsically surface-specific technique, Second Harmonic Generation (SHG) is widely used in the study of
interface in recent years. The SHG signals from the air/liquid interface of Rhodamine B and Sodium Dodecyl Benzene
Sulfonate (SDBS) aqueous solutions were obtained and analyzed, which demonstrate that the SHG signal intensity of
Rhodamine B is stronger than that of SDBS. Compared with one single solution, the SHG signal intensity of the mixed
aqueous solution of Rhodamine B and SDBS decreases. From the UV-VIS absorption spectrum of the two aqueous
solutions, it can be seen that Rhodamine B has an absorption peak closer to the second harmonic frequency. Therefore
the resonance of the second harmonic frequency with the frequency of the dipole transitions of the chromophore
considerably enhances the signal intensity. Furthermore, the hyperpolarizabilities of the molecules of Rhodamine B and
SDBS are calculated from first-principles, which reveal that the hyperpolarizability of Rhodamine B molecule is greater
than that of SDBS molecule. When they are mixed, molecules of Rhodamine B and SDBS gather together because
Rhadamine B molecule carries positive surface charge and SDBS is anionic surfactant, causing the decrease of the SHG
intensity of the mixed solution.
By considering the influence of the turn-off time and the modulation frequency of the acousto-optic (AO) modulator, the coupled rate equations for a diode-pumped doubly Q-switched and mode-locked (QML) laser with AO modulator and Cr4+∶YAG saturable absorber under Gaussian approximation are given. By numerically solving these equations, the key parameters of an optimally coupled doubly QML laser including the gain medium, the saturable absorber and the resonator as well as the modulation frequency of AO modulator are obtained, which can maximize the pulse energy of singly Q-switched envelope. A diode-pumped doubly QML Nd∶GdVO4 laser with AO modulator and Cr4+∶YAG saturable absorber is constructed and the experimental results are in agreement with the numerical simulations.
A simultaneous Q-switched and mode-locked (QML) Nd:LuVO4 laser with an acousto-optic (AO) modulator and GaAs was presented. By inserting an AO modulator into the laser cavity, the stability of the QML pulses was improved and the pulse width was compressed significantly. The pulse energy and the peak power of mode-locked pulses under the Q-switched envelope had greatly increased. Considering the influences of the turnoff time and the modulation frequency of the AO modulator, a rate equation model for dual-loss modulated QML lasers was given and the numerical solutions of the rate equations were in good agreement with the experimental results.
It has been proved theoretically and experimentally that a doubly Q-switched laser with both an electro-optic (EO)
modulator and a GaAs saturable absorber can obtain more symmetric and shorter pulse with high pulse peak power,
which is more useful in some applications. Therefore it is essential to optimize this kind of doubly Q-switched lasers. In
this paper, by combining the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs
saturable absorber, and considering the Gaussian spatial distributions of the intracavity photon density and the initial
population-inversion density as well as the influence of the electro-optic (EO) Q-switch, we introduce some new
normalized parameters and provide the new normalized rate equations for a diode-pumped doubly Q-switched laser with
both an electro-optic (EO) modulator and a GaAs saturable absorber, which are solved numerically. The key parameters
of an optimally coupled doubly Q-switched laser are determined, and a group of general curves are generated for the first
time. These key parameters include the optimal normalized coupling parameter, the optimal normalized saturable
absorber parameters, and the normalized parameters of the electro-optic (EO) Q-switch, which can maximize the output
energy. Meanwhile, the corresponding normalized energy, the normalized peak power and the normalized pulse width
are given. The curves clearly show the dependence of the optimal key parameters on the parameters of the gain medium,
the GaAs saturable absorber, the electro-optic (EO) Q-switch, the resonator and the spatial distributions of the intracavity
photon density. These optimal results are compared with those of the optimized single Q-switched lasers. Sample
calculations for a diode-pumped Nd:YVO4 laser with both an electro-optic (EO) modulator and a GaAs saturable
absorber are presented to demonstrate the use of the curves and the relevant formulas.
Using the ABCD matrix theory that takes into account the thermal lens effect of the gain medium and rate equations that consider the Gaussian spatial distributions of the intracavity photon density and pump beam, the pulse duration of a passively Q-switched laser is optimized by choosing the appropriate oscillating beam radius on the Q-switch wafer and pump beam radius in the gain medium, which provides a simple way to optimize the pulse duration. By changing the positions of the GaAs in the cavity or the pump beam focal plane in the gain medium in a diode-pumped passively Q-switched Nd:YVO4 laser with a GaAs saturable absorber, the optimization of pulse duration is easily realized, which is in good agreement with the theoretical calculations.
By considering the Gaussian spatial distribution of the initial population-inversion density and the intracavity photon densities of the fundamental, the signal, and the idle lights, the rate equations of a laser-diode-pumped, doubly Q-switched, intracavity optical parametric oscillator (IOPO) with both acousto-optic modulator (AO) and Cr4+:YAG saturable absorber are derived. The influence of the pump rate, the thermal effect in the gain medium, and the change of the photon density along the cavity axis have also been taken into account the equations. In the experiment, a laser-diode-pumped, doubly Q-switched, Nd:YVO4/KTP IOPO with an acousto-optic (AO) modulator and a Cr:YAG saturable absorber is realized. The shortest pulse width of 6.7 ns has been obtained at the maximum pump power of 6.3 W. The experimental results agree well with the theoretical calculations.
By using both GaAs and Cr4+:YAG saturable absorbers simultaneously in the same cavity, a xenon-flash-lamp-pumped doubly passively Q-switched intracavity-frequency-doubling Nd3+:YAG/KTP green laser is realized. This laser can generate a more symmetric shape and shorter pulse width compared to the solely passively Q-switched intracavity-frequency-doubling green laser with Cr4+:YAG or GaAs saturable absorber. A symmetric factor is defined to describe the temporal symmetry of the pulses quantitatively. The coupled rate equations under the plane-wave approximation are used to simulate the Q-switched process of the laser, and the numerical solutions agree well with the experimental results.
A model based on rate equations that consider the spatial distribution of photon density and inversion population density, as well as the turnoff time of an acoustic-optical modulator, is developed to perform accurate predictions of the characteristics of a green laser. Numerical solutions are consistent with the experimental results of a diode-pumped acousto optical Q-switched intracavity-frequency-doubled Nd:GdVO4/KTP green laser.
In this paper, the principle and characteritics of an optical critical angle sensor based on the internal-reflection effect are introduced. Then, the method to design the optical parameters of the critical angle prisms and the relationship between these parameters and the system character are discussed with analytical and simulation results. These parameters include the initial angle of incidence, non-parallelism errors of the two parallel faces, and the surface flatness of the reflection faces. A pair of custom-built critical angle prisms providing three internal-reflections is used in our simulation. With the initial angle error is 20 arcsec, the matched non-parallelism errors of the prisms are 30 arcsec and the surface flatness is λ/8, the sensitivity of the system is better than 0.05 arcsec and the nonlinearity is less than 0.3%.
The relationship between the Fermi level of MCT and the impurity concentration and temperature was calculated with considering the special characteristics of nonparabolic bands of MCT material. And then an imitative formula which coincide very well with the values of log log plot of NDA versus T(m/m0) the curves for constant reduced Fermi level are partially straight lines only have been obtained. Key words: Fermi level, nonparabolic band, Burstein—Moss effect
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