Prof. Marco Abbarchi Profile

Prof. Marco Abbarchi

at IM2NP

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Author

Publications (9)

Proceedings Article | 18 June 2024 Presentation + Paper

Inverse design of bright, dielectric metasurfaces color filters based on back-propagation and multi-valued artificial neural networks

Arthur Clini de Souza, Stéphane Lanteri, Hugo Enrique Hernandez-Figueroa, Marco Abbarchi, David Grosso, Badre Kerzabi, Mahmoud Elsawy

Proceedings Volume 13017, 130170E (2024) https://doi.org/10.1117/12.3016617

KEYWORDS: Design, Simulations, Artificial neural networks, Optical filters, Refractive index, Data modeling, Color, Dielectrics, Fabrication

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Proceedings Article | 30 May 2022 Presentation

Scalable disordered hyperuniform architectures on silica obtained by solid state dewetting

Monica Bollani, Chiara Barri, Mohammed Bouabdellaoui, Luca Fagiani, Zeinab Chehadi, Marco Salvalaglio, Axel Voigt, Alexey Fedorov, David Grosso, Jean-Benoit Claude, Jerome Wenger, Marco Abbarchi

Proceedings Volume PC12142, PC1214212 (2022) https://doi.org/10.1117/12.2620273

KEYWORDS: Silica, Dewetting, Solid state physics, Solid state electronics, Silicon, Microelectronics, Transform theory, Thin films, Solids, Sol-gels

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Proceedings Article | 30 May 2022 Presentation

Soft nanoimprint lithography of metal oxides for applications in photonic

Marco Abbarchi

Proceedings Volume PC12142, PC1214213 (2022) https://doi.org/10.1117/12.2620046

KEYWORDS: Nanoimprint lithography, Oxides, Metals, Interfaces, Visible radiation, Spectroscopy, Silicon, Refractive index, Near infrared spectroscopy, Nanolithography

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Proceedings Article | 1 August 2021 Presentation

Scalable disordered hyperuniform architectures via nano-imprint lithography of metal oxides for different photonic applications

Zeinab Chehadi, Mohammed Bouabdellaoui, Mehrnaz Modaresialam, David Grosso, Marco Abbarchi

Proceedings Volume 11802, 118020A (2021) https://doi.org/10.1117/12.2595567

KEYWORDS: Oxides, Metals, Lithography, Sol-gels, Silica, Solid state physics, Silicon, Polymers, Photonic devices, Glasses

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Proceedings Article | 18 April 2021 Presentation

Dielectric nano-imprint lithography-sol-gel nanostructured for high-sensitivity refractive index sensing

Mehrnaz Modaresialam, Luc Favre, Zeinab Chehadi, Marco Abbarchi, David Grosso

Proceedings Volume 11772, 1177216 (2021) https://doi.org/10.1117/12.2593440

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Proceedings Article | 18 April 2021 Presentation + Paper

Methylated silica surfaces having tapered nipple-dimple nano-pillar morphologies as robust broad-angle and broadband anti-reﬂection coatings

Mehrnaz Modaresialam, Jean-Benoît Claude, David Grosso, Marco Abbarchi

Proceedings Volume 11769, 117690Z (2021) https://doi.org/10.1117/12.2593454

KEYWORDS: Silica, Refractive index, Glasses, Polymers, Nanostructures, Nanoimprint lithography, Solar cells, Semiconducting wafers, Resistance, Nanolithography

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In this work, mechanically, chemically, and thermally resistant broadband and broad-angle antireﬂection coatings were prepared on 10 cm diameter glass substrates combining sol−gel deposition with nanoimprint lithography. The coatings are composed of water-repellent methylated silica (Si₄O₇Me₂) and exhibit a transverse refractive index gradient created by tapered, nipple-dimple, subwavelength nanostructures, featuring a record vertical aspect ratio of ∼1.7. The structure is composed of hexagonal arrays of nanopillars (∼200 nm height, ∼120 nm width) and holes (∼50 nm depth, ∼100 nm width) with a 270 nm pitch. The corresponding eﬀective refractive index is between 1.2 and 1.26, depending on the fabrication conditions. Total transmission for double-face nanoimprint wafers reaches 96−97% in the visible range; it is limited by specular reﬂection and mostly by the intrinsic diﬀusion of the glass substrate. The antireﬂective eﬀect is eﬀective up to an ∼60° incidence angle. We address the robustness of the inorganic-based coating in various realistic and extreme conditions, comparing them to the organic perﬂuoropolyether (PFPE) counterpart (master reference). The sol−gel system is extremely stable at high temperature (up to 600 °C, against 200 °C for the polymer reference). Both systems showed excellent chemical stability, except in strong alkaline conditions. The inorganic nanostructure showed an abrasion resistance of more than 2 orders of magnitude superior to the polymer one with less than 20% loss of antireﬂective performance after 2000 rubbing cycles under an ∼2 N cm⁻² pressure. This diﬀerence springs from the large elastic modulus of the sol−gel material combined with an excellent adhesion to the substrate and to the speciﬁc nipple-dimple conformation. The presence of holes allows maintaining a refractive index gradient proﬁle even after tearing out part of the nanopillar population. Our results are relevant to applications where transparent windows with broadband and broad-angle transmission are needed, such as protective glasses on photovoltaic cells or C-MOS cameras.

Proceedings Article | 7 March 2014 Paper

Formation and control of transverse patterns in a quantum fluid of microcavity polaritons

P. Lewandowski, V. Ardizzone, Y. Tse, N. Kwong, M. Luk, A. Lücke, M. Abbarchi, J. Bloch, E. Baudin, E. Galopin, A. Lemaître, P. Leung, Ph. Roussignol, R. Binder, J. Tignon, S. Schumacher

Proceedings Volume 8984, 89840X (2014) https://doi.org/10.1117/12.2037174

KEYWORDS: Polaritons, Polarization, Optical microcavities, Transient nonlinear optics, Scattering, Geometrical optics, Switching, Semiconductors, Neodymium, Four wave mixing

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Proceedings Article | 16 September 2011 Paper

Carrier and nuclear spin pumping in strain free GaAs/AlGaAs quantum dots grown by droplet epitaxy

T. Amand, B. Urbaszek, G. Sallen, S. Kunz, T. Kuroda, T. Belhadj, A. Kunold, T. Mano, M. Abbarchi, D. Lagarde, X. Marie, K. Sakoda

Proceedings Volume 8100, 81000H (2011) https://doi.org/10.1117/12.892681

KEYWORDS: Polarization, Electrons, Quantum dots, Gallium arsenide, Excitons, Quantum wells, Photon polarization, Indium arsenide, Epitaxy, Luminescence

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SPIE Journal Paper | 1 October 2009

Selective growth of InAs quantum dots on SiO2-masked GaAs

Fabrizio Arciprete, Ernesto Placidi, Fulvia Patella, Massimo Fanfoni, Adalberto Balzarotti, Anna Vinattieri, L. Cavigli, M. Abbarchi, Massimo Gurioli, Lamberto Lunghi, Annamaria Gerardino

JNP, Vol. 3, Issue 01, 031995, (October 2009) https://doi.org/10.1117/12.10.1117/1.3266494

KEYWORDS: Gallium arsenide, Indium arsenide, Oxides, Quantum dots, Photomasks, Gallium, Atomic force microscopy, Luminescence, Molecular beam epitaxy, Indium gallium arsenide

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Showing 5 of 9 publications

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