Detailed Fourier Transform Infrared (FTIR) Study Of The Temperature Dependence Of The Oxygen Impurity In Silicon

K. Krishnan; S. L. Hill

doi:10.1117/12.932114

29 October 1981 Detailed Fourier Transform Infrared (FTIR) Study Of The Temperature Dependence Of The Oxygen Impurity In Silicon

K. Krishnan, S. L. Hill

Author Affiliations +

Proceedings Volume 0289, 1981 Intl Conf on Fourier Transform Infrared Spectroscopy; (1981) https://doi.org/10.1117/12.932114
Event: 1981 International Conference on Fourier Transform Infrared Spectroscopy, 1981, Columbia, United States

Abstract

Fl-IR spectra of Czochralski silicon crystals containing interstitial oxygen impurity have been recorded from 15K to room temperature. The major bands due to the oxygen impurity show intensity and frequency changes. These changes can be discussed in terms of a model for the oxygen atom moving in a potential with six-fold axis as described by Hrostowski and Adler.

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K. Krishnan and S. L. Hill "Detailed Fourier Transform Infrared (FTIR) Study Of The Temperature Dependence Of The Oxygen Impurity In Silicon", Proc. SPIE 0289, 1981 Intl Conf on Fourier Transform Infrared Spectroscopy, (29 October 1981); https://doi.org/10.1117/12.932114

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