Integrated photonic devices with silicon oxycarbide

Faisal Ahmed Memon; Francesco Morichetti; Andrea Melloni

doi:10.1117/12.2314702

17 May 2018 Integrated photonic devices with silicon oxycarbide

Faisal Ahmed Memon, Francesco Morichetti, Andrea Melloni

Proceedings Volume 10683, Fiber Lasers and Glass Photonics: Materials through Applications; 106833I (2018) https://doi.org/10.1117/12.2314702
Event: SPIE Photonics Europe, 2018, Strasbourg, France

Abstract

In this paper, we report on the potential of silicon oxycarbide (SiOC) for integrated photonic applications. SiOC films are developed by reactive radio frequency magnetron sputtering from a silicon carbide (SiC) target in the presence of argon and oxygen gases. The optical properties of the developed SiOC film are characterized with spectroscopic ellispometry over a broad wavelength range 300-1600 nm. The refractive index n of the SiOC film is 2.2 at wavelength λ = 1550 nm and the extinction coefficient k is estimated to be less than 10^-4 in the near-infrared region above 600 nm. The topography of SiOC films is studied with AFM showing very smooth surface, with rms roughness of 0.24 nm. SiOC film with refractive index n = 2.2 is then patterned by direct laser-writing lithography and etched with reactive ion etching to realize high contrast SiOC core optical waveguides for integrated photonics applications. The waveguide losses are characterized at telecommunication wavelength λ = 1550 nm. As an example of photonic integrated devices integrating SiOC films, a microring resonator is fabricated where a SiOC layer is used as a coating material for the core of a silicon oxynitride (SiON) waveguide.

Citation Download Citation

Faisal Ahmed Memon, Francesco Morichetti, and Andrea Melloni "Integrated photonic devices with silicon oxycarbide", Proc. SPIE 10683, Fiber Lasers and Glass Photonics: Materials through Applications, 106833I (17 May 2018); https://doi.org/10.1117/12.2314702

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