Nonalloyed Pd/Ge/Ti/Pt ohmic contact for the high-power optical switch

Weiyu Han; H. S. Lee; L. M. Casas; Kenneth A. Jones; Robert J. Zeto; Charles D. Mulford

doi:10.1117/12.59066

12 May 1992 Nonalloyed Pd/Ge/Ti/Pt ohmic contact for the high-power optical switch

Weiyu Han, H. S. Lee, L. M. Casas, Kenneth A. Jones, Robert J. Zeto, Charles D. Mulford

Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59066
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

A non-alloyed Pd/GeTFi/Pt ohmic contact for an n-GaAs has been investigated. The specific contact resistance was 4.7x10^-7Ω.cm² for an n-GaAs film which was doped to 2x10¹⁸ ^-3.Auger depth profile showed that the interface between the contact and n-GaAs was abrupt. There was almost no change of Auger depth profiles before and after the sample was put in the furnace for 20 hours at 300 °C in an N₂ ambient Scanning electron microscopy showed that the contact surface was very smooth after a 400 °C , 15 second anneal. Auger depth profiles and contact resistance measurements showed that the contacts begin to deteriorate when the rapid thermal annealing time exceeds 35seconds.

Citation Download Citation

Weiyu Han, H. S. Lee, L. M. Casas, Kenneth A. Jones, Robert J. Zeto, and Charles D. Mulford "Nonalloyed Pd/Ge/Ti/Pt ohmic contact for the high-power optical switch", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); https://doi.org/10.1117/12.59066

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